V4生成DDRIP核用户接口app_af_addr[35:0]，
Memory address and command. Bit 35 is used internally by the
controller. The controller ignores this bit from the user interface. Bits
[34:32] are used for dynamic commands as follows:
001: Auto Refresh
010: Precharge
100: Write
101: Read
Bits [31:0] form the memory chip select, bank address, row address,
and column address. The positioning of the chip, bank, row, and
column addresses changes based on the memory configuration
想请教一下，我在操作读写时序的时候，还用不用关心Auto Refresh(001)和Precharge(010)这两个命令，我按照用户时序在modelsim进行了DDR读写仿真，仿真结果在PRE之后会报错，如下：
# At time 273990.000 ns PRE : Addr[10] = 1, Bank = 00
# At time 274020.000 ns AREF : Auto Refresh
# At time 274100.000 ns ACT : Bank = 0, Row = Z000
# At time 274100.000 ns ERROR: tRFC violation during Activate bank 0
希望尽快解答一下，万分感谢！
第二个问题是在modelsim仿真DDR读写结果正确，但是用chipscope抓取信号时，读出数据很大，不知道是什么原因，可以指点下吗？
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