stm32f107 使用内部FLASH
小弟从网上找的例程是F103的 我用的是F107VCT6，看了半天代码，自己又找了一个103做实验，103调通了，可是107失败了，程序没变，请问还有哪些地方需要更改一下，下面附上flash.c,二楼放MAIN.c//从指定地址开始读取多个数据
void FLASH_ReadMoreData(uint32_t startAddress,uint16_t *readData,uint16_t countToRead)
{
uint16_t dataIndex;
for(dataIndex=0;dataIndex<countToRead;dataIndex++)
{
readData=FLASH_ReadHalfWord(startAddress+dataIndex*2);
}
}
//读取指定地址的半字(16位数据)
uint16_t FLASH_ReadHalfWord(uint32_t address)
{
return*(__IO uint16_t*)address;
}
//读取指定地址的全字(32位数据)
uint32_t FLASH_ReadWord(uint32_t address)
{
uint32_t temp1,temp2;
temp1=*(__IO uint16_t*)address;
temp2=*(__IO uint16_t*)(address+2);
return(temp2<<16)+temp1;
}
//从指定地址开始写入多个数据
void FLASH_WriteMoreData(uint32_t startAddress,uint16_t *writeData,uint16_t countToWrite)
{
if(startAddress<FLASH_BASE||((startAddress+countToWrite*2)>=(FLASH_BASE+1024*FLASH_SIZE)))
{
return;//非法地址
}
FLASH_Unlock(); //解锁写保护
uint32_t offsetAddress=startAddress-FLASH_BASE; //计算去掉0X08000000后的实际偏移地址
uint32_t sectorPosition=offsetAddress/SECTOR_SIZE; //计算扇区地址，对于STM32F103VET6为0~255
uint32_t sectorStartAddress=sectorPosition*SECTOR_SIZE+FLASH_BASE; //对应扇区的首地址
FLASH_ErasePage(sectorStartAddress);//擦除这个扇区
uint16_t dataIndex;
for(dataIndex=0;dataIndex<countToWrite;dataIndex++)
{
FLASH_ProgramHalfWord(startAddress+dataIndex*2,writeData);
}
FLASH_Lock();//上锁写保护
}
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