IRLR3802场效应管P TO P兼容物料DB004NG，20V90A 3.5mΩ TO-252封装
型号：DB004NG
电压电流：20V90A
内阻：3.5mΩ
封装：TO-252封装
应用：太阳能灯、数码产品锂电池保护板
Description：
This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge.It can be used in a wide variety of applications.
Features：
1) VDS=20V,ID=90A,RDS(ON)<3.5mΩ@VGS=4.5V
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra Iow RDS(ON).
5) Excellent package for good heat dissipation.
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