*$*POLYFET RF DEVICES
*FEB 15 1994
*PHONE:(805)484-4210; FAX:(805)484-3393 CONTACT:MR. S.K. LEONG
*HIGH POWER, HIGH FREQUENCY, RF N-CHANNEL VERTICAL DMOS MOSFET
*TO GENERATE S PARAMETER MATCHING DATA SHEET, SET VG=3.55V FOR IDQ=800MA
*MODEL APPLICABLE FOR ALL F2A 4 DIE IN AP AND AK PACKAGE.
* NOTE:- HP/EESOF USES 'GATE DRAIN SOURCE' ORDER
* ( ;D G S )
LG 10 11 0.85N
RGATE 11 12 0.78
CG 10 30 0.10P
CRSS 12 17 3.75P
CISS 12 14 38.54P
LS 14 30 0.10N
CS 14 30 0.70P
LD 17 20 0.88N
CD 20 30 0.10P
R_RC 16 17 28.8
C_RC 14 16 832.7P
MOS 13 12 14 14 F2048MOS L=0.35U W=0.032
JFET 17 14 13 F2048JF
DBODY 14 17 F2048DB
.MODEL F2048MOS NMOS (VTO=2 KP=1.5E-5 LAMBDA=0.1 RD=0.6 RS=0.4)
.MODEL F2048JF NJF (VTO=-6.8 BETA=0.1 LAMBDA=5)
.MODEL F2048DB D (CJO=48P RS=0.25 VJ=0.7 M=0.35 BV=65)
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