芯片的ESD防护在集成电路的可靠性中不可忽视，然而由ESD造成的问题通常困扰着IC设计者。尤其在先进CMOS工艺中，ESD问题变得尤为突出。只有弄清楚各种工艺下ESD现象的机理，才能使IC中ESD防护问题得到更好的解决。
现有的ESD书籍总结大致如下：
[1] S. Dabral and T. Maloney, Basic ESD and I/O Design. Santa Clara, CA: John Wiley & Sons, Ltd., 1998.
[2] A. Amerasekera and C. Duvvury, ESD in silicon integrated circuits – second edition: John Wiley & Sons, Ltd., 2002.
[3] A. Z. H. Wang, On-chip ESD Protection for Integrated Circuits an IC design perspective: Kluwer Academic 2002.
[4] M. D. Ker, "ESD (Electrostatic Discharge) Protection in CMOS Integrated Circuits," http://www.ics.ee.nctu.edu.tw/~mdker/ESD/index.html.
[5] S. H. Voldman, ESD: Circuits and Device: John Wiley & Sons, Ltd, 2006.
[6] S. H. Voldman, ESD: Physics and Device: John Wiley & Sons, Ltd, 2006.
[7] S. H. Voldman, ESD: RF Technology and Circuits: John Wiley & Sons, Ltd, 2006.
[8] P. Leroux and M. Steyaert, "LAN-ESD Co-Design for Fully Integrated CMOS Wireless." vol. 843 Springer Netherlands, 2005
[9] K. Esmark, H. Gossner, and W. Stadler, Advanced simulation methods for ESD protection development. Amsterdam; Boston: Elsevier, 2003.
[10] O. Semenov, H. Sarbishaei, and M. Sachdev, ESD Protection Device and Circuit Design for Advanced CMOS Technologies, 2008. |
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