把张教主的FLASH写EEPROM的移到MC9S08QG8怎么不成,哪出错了?
//MC9S08QG8
#include <hidef.h> /* for EnableInterrupts macro */
#include "derivative.h" /* include peripheral declarations */
//自己定义一个汇编NOP指令的宏
#define NOP() asm(nop)
#define SIZE_FUNC_RAM 50 //擦写在RAM中的空间.
//函数类型声明
void WriteEE(byte*, byte*, byte); //写一串数据字节到E2
void EraseEE(byte*); //擦除E2数据页
//定义一些数据段
//==============================================================
// Following data are declared as EEPROM (Flash emulation)
// Refer to PRM file for address mapping
//==============================================================
// PRM文件定义---是EEPROM定义.*/
// ROM = READ_ONLY 0XE000 TO 0XF5FF;
// EPROM = READ_ONLY 0xF600 TO 0xFDFF;
// ROM1 = READ_ONLY 0xFE00 TO 0xFFCF;
// END
//PLACEMENT /* Here all predefined and user segments are placed into the SEGMENTS defined above. */
// EEPROM INTO EPROM;
#pragma CONST_SEG EEPROM
const byte EE_Data[2048]; //保留一页Flash空间作为E2模拟
//#pragma CONST_SEG DEFALUT //default data segment
//==============================================================
// Following data are declared in the direct addressing area
// for fast access (address < 0x100)
//==============================================================
#pragma DATA_SEG SHORT MY_ZEROPAGE //direct addressing data segment
byte testData[8]={'1', '2', '3', '4', '5', '6', '7', '8'}; //测试时被写入E2的数据
//==============================================================
// Following data are declared in the common data area
// (address >= 0x100)
//==============================================================
#pragma DATA_SEG DEFALUT //default data segment
void MCU_init(void); //初始化MCU
//主程序入口
void main(void) {
MCU_init();
EnableInterrupts;
EraseEE((byte*)EE_Data);
WriteEE((byte*)EE_Data, testData, 8);
for(;;) {
__RESET_WATCHDOG(); // feeds the dog
}
}
//MCU初始化子程序
void MCU_init(void)
{
// 配置时钟频率
FCDIV = 0x27; //set FCLK base on 8MHz Fbus 200K
}
//下面这段代码是专门为启动Flash编程命令然后查询编程结束标志
//在执行之前必须被拷贝到RAM区（任意地址），然后从RAM中运行
//=============================================================================
byte ExecEePrgCmd(byte cmd)
{
FCMD = cmd; //set command
FSTAT_FCBEF = 1; //command launched and FCBEF cleared
NOP(); //wait at least 4 nop
NOP();
NOP();
NOP();
if (FSTAT_FPVIOL || FSTAT_FACCERR) { //exit if encounter any error
return(0); //return with error flag
}
while(!FSTAT_FCCF) { //wait for FCCF=1
__RESET_WATCHDOG();
}
return(1); //return with success
}
//定义上面一段代码的长度，编译后不超过50字节
//写一串数据到模拟E2区，大部分代码是在Flash区内运行的，只是上面关键的一小段代码必须拷贝到RAM区才能运行
void WriteEE(byte* eeAddr, byte* datBuff, byte byteCount)
{
byte i;
byte *srcPtr;
byte codeBuff[SIZE_FUNC_RAM]; //buffer size is slightly bigger than the length of ExecEePrgCmd function
//这里示范的是将关键代码拷贝到局部变量（堆栈）区。用户可以将代码拷贝到静态数据区，一样使用
//Copy ExecEePrgCmd code into RAM
srcPtr = (byte*)ExecEePrgCmd; //function entry in Flash
for (i=0;i<SIZE_FUNC_RAM;i++) { //do byte copy
codeBuff = srcPtr;
}
FSTAT_FACCERR = 1; //clear any pending Flash error flag
while (byteCount) {
*eeAddr++ = *datBuff++; //latch data byte and memory address
DisableInterrupts; //禁止任何中断，很重要！！！
((byte (*)(byte))codeBuff)(0x20); //编程一个字节 在前面加 (void)就没有了报警 -C1420
EnableInterrupts;
byteCount--;
}
}
//擦除E2页面，原理基本同上//=============================================================================
// Erase a page of EEPROM (Flash emulated)
//=============================================================================
void EraseEE(byte* eeAddr)
{
byte i;
byte *srcPtr;
byte codeBuff[SIZE_FUNC_RAM]; //buffer size is slightly bigger than the length of ExecEePrgCmd function
//Copy ExecEePrgCmd code into RAM
srcPtr = (byte*)ExecEePrgCmd; //function entry in Flash
for (i=0;i<SIZE_FUNC_RAM;i++) { //do byte copy
codeBuff = srcPtr;
}
FSTAT_FACCERR = 1; //clear any pending Flash error flag
*eeAddr = 0; //latch memory address
DisableInterrupts;
((byte (*)(byte))codeBuff)(0x40); //do page erase在前面加 (void)就没有了报警 -C1420
EnableInterrupts;
}
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