周一特价:
数字三极管 LMUN2133
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base-emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the SOT-23
package which is designed for low power surface mount applications.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• The SOT-23 package can be soldered using wave or reflow. The
modified gull-winged leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
• Available in 8 mm embossed tape and reel. Use the Device Number
to order the 7 inch/3000 unit reel. Replace “T1” with “T3” in the
Device Number to order the 13 inch/10,000 unit reel.
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating Symbol Value Unit
Collector-Base Voltage VCBO 50 Vdc
Collector-Emitter Voltage VCEO 50 Vdc
Collector Current IC 100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD 246 (Note 1.)
400 (Note 2.)
1.5 (Note 1.)
2.0 (Note 2.)
mW
°C/W
Thermal Resistance –
Junction-to-Ambient
RθJA 508 (Note 1.)
311 (Note 2.)
°C/W
Thermal Resistance –
Junction-to-Lead
RθJL 174 (Note 1.)
208 (Note 2.)
°C/W
Junction and Storage
Temperature Range
TJ, Tstg –55 to +150 °C
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 x 1.0 inch Pad
SOT |