stm32擦除flash的时候FLASH_EraseInitTypeDef结构的Page填啥？

只看该作者 · 2017-10-23 14:17

看了网上的例子，填好像是地址
uint32_t writeFlashData = 0x55555555;
uint32_t addr = 0x08007000;

//FLASH写入数据测试
void writeFlashTest(void)
{
//1、解锁FLASH
  HAL_FLASH_Unlock();

//2、擦除FLASH
//初始化FLASH_EraseInitTypeDef
FLASH_EraseInitTypeDef f;
f.TypeErase = FLASH_TYPEERASE_PAGES;
f.PageAddress = addr;
f.NbPages = 1;
//设置PageError
uint32_t PageError = 0;
//调用擦除函数
HAL_FLASHEx_Erase(&f, &PageError);

//3、对FLASH烧写
HAL_FLASH_Program(TYPEPROGRAM_WORD, addr, writeFlashData);

//4、锁住FLASH
  HAL_FLASH_Lock();
}

可是官方给的例程里填的是第几页吧
/* Unlock the Flash to enable the flash control register access *************/
  HAL_FLASH_Unlock();

  /* Erase the user Flash area
(area defined by FLASH_USER_START_ADDR and FLASH_USER_END_ADDR) ***********/

  /* Clear OPTVERR bit set on virgin samples */
  __HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_OPTVERR);
  /* Get the 1st page to erase */
  FirstPage = GetPage(FLASH_USER_START_ADDR);
  /* Get the number of pages to erase from 1st page */
  NbOfPages = GetPage(FLASH_USER_END_ADDR) - FirstPage + 1;
  /* Get the bank */
  BankNumber = GetBank(FLASH_USER_START_ADDR);
  /* Fill EraseInit structure*/
  EraseInitStruct.TypeErase = FLASH_TYPEERASE_PAGES;
  EraseInitStruct.Banks    = BankNumber;
  EraseInitStruct.Page       = FirstPage;
  EraseInitStruct.NbPages    = NbOfPages;

/**
  * @brief  Gets the page of a given address
  * @param  Addr: Address of the FLASH Memory
  * @retval The page of a given address
  */
static uint32_t GetPage(uint32_t Addr)
{
  uint32_t page = 0;

  if (Addr < (FLASH_BASE + FLASH_BANK_SIZE))
  {
/* Bank 1 */
page = (Addr - FLASH_BASE) / FLASH_PAGE_SIZE;
  }
  else
  {
/* Bank 2 */
page = (Addr - (FLASH_BASE + FLASH_BANK_SIZE)) / FLASH_PAGE_SIZE;
  }

  return page;
}

1万 · 2017-10-23 15:38

复制

uint32_t writeFlashData = 0x55555555;

uint32_t addr = 0x08007000;



//FLASH写入数据测试

void writeFlashTest(void)

{

    //1、解锁FLASH

  HAL_FLASH_Unlock();



    //2、擦除FLASH

    //初始化FLASH_EraseInitTypeDef

    FLASH_EraseInitTypeDef f;

    f.TypeErase = FLASH_TYPEERASE_PAGES;

    f.PageAddress = addr;

    f.NbPages = 1;

    //设置PageError

    uint32_t PageError = 0;

    //调用擦除函数

    HAL_FLASHEx_Erase(&f, &PageError);



    //3、对FLASH烧写

    HAL_FLASH_Program(TYPEPROGRAM_WORD, addr, writeFlashData);



    //4、锁住FLASH

  HAL_FLASH_Lock();

}



//FLASH读取数据测试

void printFlashTest(void)

{

  uint32_t temp = *(__IO uint32_t*)(addr);



    printf("addr:0x%x, data:0x%x\r\n", addr, temp);

}

1万 · 2017-10-23 15:38

其中比较特殊的是擦除步骤，需要定义个FLASH_EraseInitTypeDef的数据，FLASH_EraseInitTypeDef有三个成员：TypeErase、PageAddress和NbPages。

其中，TypeErase有两个选项，页擦除和块擦除：

#define FLASH_TYPEERASE_PAGES ((uint32_t)0x00) /*!<Pages erase only*/
#define FLASH_TYPEERASE_MASSERASE ((uint32_t)0x01) /*!<Flash mass erase activation*/
1
2
PageAddress是设置FLASH地址，这里为0x8007000；

NbPages为擦除页数（块数），这里为1;

另外还需要定义一个uint32_t变量——PageError，如果出现错误这个变量会被设置为出错的FLASH地址。