1.IMX6Q更换到4G内存，使用Mx6DQSDL DDR3 Script Aid V0.08.xlsx文件生成RealView .inc
2.使用DDR_Stress_Tester_V1.0.3做calibration和压力测试。
3.select the DDR density per chip select时选择9（注：如果选择0，当2GB使用测试OK）
压力测试时总是出现测试失败如下：
loop: 1
DDR Freq: 198 MHz
t0.1: data is addr test
Address of failure: 0x10000000
Data was: 0x00000000
But pattern should match address
内存的参数配置如下：
Manufacturer: | Micron | Memory part number: | | | Memory type: | DDR3-1600 | DRAM density (Gb) | 8 | DRAM Bus Width | 16 | Number of Banks | 8 | Number of ROW Addresses | 16 | Number of COLUMN Addresses | 10 | Page Size (K) | 2 | Self-Refresh Temperature (SRT) | Normal | tRCD=tRP=CL (ns) | 13.75 | tRC Min (ns) | 48.75 | tRAS Min (ns) | 35 | System Information | i.Mx Part | i.Mx6Q | Bus Width | 64 | Density per chip select (Gb) | 32 | Number of Chip Selects used | 1 | Total DRAM Density (Gb) | 32 | DRAM Clock Freq (MHz) | 528 | DRAM Clock Cycle Time (ns) | 1.894 | Address Mirror (for CS1) | Disable |
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