测试STM32F103 内部flash的情况

1万 · 2018-5-24 15:54

关键的代码列出：
      key=KEY_Scan(0);

u8 KEY_Scan(u8 mode)
{
static u8 key_up=1;//按键按松开标志
if(mode)key_up=1;  //支持连按
if(key_up&&(KEY0==0||KEY1==0||KEY2==0||WK_UP==1))
{
delay_ms(10);//去抖动
key_up=0;
if(KEY0==0)return KEY0_PRES;
else if(KEY1==0)return KEY1_PRES;
else if(KEY2==0)return KEY2_PRES;
else if(WK_UP==1)return WKUP_PRES;
}else if(KEY0==1&&KEY1==1&&KEY2==1&&WK_UP==0)key_up=1;
return 0;// 无按键按下
}

1万 · 2018-5-24 15:54

      if(key==KEY1_PRES) //KEY1按下,写入STM32 FLASH
      {
         STMFLASH_Write(FLASH_SAVE_ADDR,(u16*)TEXT_Buffer,SIZE);
      }

1万 · 2018-5-24 15:55

      if(key==KEY0_PRES) //KEY0按下,读取字符串并显示
      {
         STMFLASH_Read(FLASH_SAVE_ADDR,(u16*)datatemp,SIZE);
      }

1万 · 2018-5-24 16:38

void STMFLASH_Write(u32 WriteAddr,u16 *pBuffer,u16 NumToWrite)
{
u32 secpos;    //扇区地址
u16 secoff;    //扇区内偏移地址(16位字计算)
u16 secremain; //扇区内剩余地址(16位字计算)
u16 i;
u32 offaddr; //去掉0X08000000后的地址
if(WriteAddr<STM32_FLASH_BASE||(WriteAddr>=(STM32_FLASH_BASE+1024*STM32_FLASH_SIZE)))return;//非法地址
FLASH_Unlock(); //解锁
offaddr=WriteAddr-STM32_FLASH_BASE; //实际偏移地址.
secpos=offaddr/STM_SECTOR_SIZE; //扇区地址  0~127 for STM32F103RBT6
secoff=(offaddr%STM_SECTOR_SIZE)/2; //在扇区内的偏移(2个字节为基本单位.)
secremain=STM_SECTOR_SIZE/2-secoff; //扇区剩余空间大小
if(NumToWrite<=secremain)secremain=NumToWrite;//不大于该扇区范围
while(1)
{
      STMFLASH_Read(secpos*STM_SECTOR_SIZE+STM32_FLASH_BASE,STMFLASH_BUF,STM_SECTOR_SIZE/2);//读出整个扇区的内容
      for(i=0; i<secremain; i++) //校验数据
      {
         if(STMFLASH_BUF[secoff+i]!=0XFFFF)break;//需要擦除
      }
      if(i<secremain)//需要擦除
      {
         FLASH_ErasePage(secpos*STM_SECTOR_SIZE+STM32_FLASH_BASE);//擦除这个扇区
         for(i=0; i<secremain; i++) //复制
         {
            STMFLASH_BUF[i+secoff]=pBuffer[i];
         }
         STMFLASH_Write_NoCheck(secpos*STM_SECTOR_SIZE+STM32_FLASH_BASE,STMFLASH_BUF,STM_SECTOR_SIZE/2);//写入整个扇区
      } else STMFLASH_Write_NoCheck(WriteAddr,pBuffer,secremain);//写已经擦除了的,直接写入扇区剩余区间.
      if(NumToWrite==secremain)break;//写入结束了
      else//写入未结束
      {
         secpos++; //扇区地址增1
         secoff=0; //偏移位置为0
         pBuffer+=secremain;    //指针偏移
         WriteAddr+=secremain; //写地址偏移
         NumToWrite-=secremain; //字节(16位)数递减
         if(NumToWrite>(STM_SECTOR_SIZE/2))secremain=STM_SECTOR_SIZE/2;//下一个扇区还是写不完
         else secremain=NumToWrite;//下一个扇区可以写完了
      }
};
FLASH_Lock();//上锁
}

1万 · 2018-5-24 16:39

void STMFLASH_Read(u32 ReadAddr,u16 *pBuffer,u16 NumToRead)
{
u16 i;
for(i=0; i<NumToRead; i++)
{
pBuffer[i]=STMFLASH_ReadHalfWord(ReadAddr);//读取2个字节.
ReadAddr+=2;//偏移2个字节.
}
}

1万 · 2018-5-24 16:44

//WriteAddr:起始地址
//WriteData:要写入的数据
void Test_Write(u32 WriteAddr,u16 WriteData)
{
STMFLASH_Write(WriteAddr,&WriteData,1);//写入一个字
}

只看该作者 · 2018-5-24 19:00

多谢分享，内部的闪存可以存储数据，作为EEPROM呢