本帖最后由 z_no1 于 2018-6-2 15:25 编辑
FEATURES SUMMARY
• Power Supply
-3.3V Device(AFND1208U1) 2.7V ~ 3.6V
• Organization
-Memory Cell Array : (64M + 2M) x 8bits
-Data Register : (512 + 16) x 8bits
• Automatic Program and Erase
-Page Program : (512 + 16) x 8bits
-Block Erase : (16K +512)Bytes = 32pages
• Page Read Operation
-Page Size : (512 + 16)Bytes
-Random Access : 15us(Max.)
-Serial Page Access : 30ns(Min.)
• Fast Write Cycle Time
-Program time : 200us(Typ.)
-Block Erase time : 2ms(Typ.) • Copy-Back PROGRAM Operation
-Fast Page copy without external buffering
• Command Register Operation
• Security features
-OTP area, 16Kbytes(32 pages)
• Hardware Data Protection
-Program / Erase locked during Power transitions
• Data Integrity
-Endurance : 100K Program / Erase Cycles
(With 1bit/528byte ECC)
-Data Retention : 10 years
• Package
-AFND1208U1 : Pb-Free Package
48-pin TSOP(12 x 20 / 0.5 mm pitch
48-Ball FBGA: 9.0 x 9.0 x 1.0mm
• Operating Temperature
-Commercial : 0°C ~70°C
-Industrial : -40°C~ 85°C
AFND1208(TSOP48 工业级)替代NAND512是可以的.哪有卖的?
|
楼主
