就是参考三楼说的那种电路图进行设计的。
现在有两个地方不太明白：
1，BATDRV：Battery discharge MOSFET gate driver output. Connect to 1kohm resistor to the gate of the BATFETP-channel power MOSFET. Connect the source of the BATFET to the system load voltage node. Connect the drain of the BATFET to the battery pack positive node. The internal gate drive is asymmetrical to allow a quick turn-off and slower turn-on, in addition to the internal break-before-make logic with respect
2，ACDRV：AC adapter to system switch driver output. Connect to 4-kΩ resistor then to the gate of the ACFETN-channel power MOSFET and the reverse conduction blocking N-channel power MOSFET. Connect both FETs as common-source. The internal gate drive is asymmetrical, allowing a quick turn-off and slower turn-on in addition to the internal break-before-make logic with respect to the BATDRV.
to ACDRV.
就是参考三楼说的那种电路图进行设计的。
现在有两个地方不太明白：
1，BATDRV：Battery discharge MOSFET gate driver output. Connect to 1kohm resistor to the gate of the BATFETP-channel power MOSFET. Conne ...
zhangyong1818 发表于 2011-9-15 14:53
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