二十三、CH32V103应用教程——读写内部FLASH

/*Functions used for all CH32V10x devices*/

void FLASH_SetLatency(uint32_t FLASH_Latency);

void FLASH_HalfCycleAccessCmd(uint32_t FLASH_HalfCycleAccess);

void FLASH_PrefetchBufferCmd(uint32_t FLASH_PrefetchBuffer);

void FLASH_Unlock(void);

void FLASH_Lock(void);

FLASH_Status FLASH_ErasePage(uint32_t Page_Address);

FLASH_Status FLASH_EraseAllPages(void);

FLASH_Status FLASH_EraseOptionBytes(void);

FLASH_Status FLASH_ProgramWord(uint32_t Address, uint32_t Data);

FLASH_Status FLASH_ProgramHalfWord(uint32_t Address, uint16_t Data);

FLASH_Status FLASH_ProgramOptionByteData(uint32_t Address, uint8_t Data);

FLASH_Status FLASH_EnableWriteProtection(uint32_t FLASH_Pages);

FLASH_Status FLASH_ReadOutProtection(FunctionalState NewState);

FLASH_Status FLASH_UserOptionByteConfig(uint16_t OB_IWDG, uint16_t OB_STOP, uint16_t OB_STDBY);

uint32_t FLASH_GetUserOptionByte(void);

uint32_t FLASH_GetWriteProtectionOptionByte(void);

FlagStatus FLASH_GetReadOutProtectionStatus(void);

FlagStatus FLASH_GetPrefetchBufferStatus(void);

void FLASH_ITConfig(uint32_t FLASH_IT, FunctionalState NewState);

FlagStatus FLASH_GetFlagStatus(uint32_t FLASH_FLAG);

void FLASH_ClearFlag(uint32_t FLASH_FLAG);

FLASH_Status FLASH_GetStatus(void);

FLASH_Status FLASH_WaitForLastOperation(uint32_t Timeout);

void FLASH_Unlock_Fast(void);

void FLASH_Lock_Fast(void);

void FLASH_BufReset(void);

void FLASH_BufLoad(uint32_t Address, uint32_t Data0, uint32_t Data1, uint32_t Data2, uint32_t Data3);

void FLASH_ErasePage_Fast(uint32_t Page_Address);

void FLASH_ProgramPage_Fast(uint32_t Page_Address);



/* New function used for all CH32V10x devices */

void FLASH_UnlockBank1(void);

void FLASH_LockBank1(void);

FLASH_Status FLASH_EraseAllBank1Pages(void);

FLASH_Status FLASH_GetBank1Status(void);

FLASH_Status FLASH_WaitForLastBank1Operation(uint32_t Timeout);

#ifndef __FLASH_H

#define __FLASH_H



#include "ch32v10x_conf.h"



typedef enum {FAILED = 0, PASSED = !FAILED} TestStatus;

#define PAGE_WRITE_START_ADDR  ((uint32_t)0x0800F000) /* Start from 60K */

#define PAGE_WRITE_END_ADDR    ((uint32_t)0x08010000) /* End at 63K */

#define FLASH_PAGE_SIZE         1024



int Flash_Test(void);

int Flash_Test_Fast(void);



#endif

#include "flash.h"



/* Global Variable */

uint32_t EraseCounter = 0x00; //记录要擦除多少页

uint32_t Address = 0x00;      //记录写入的地址

uint16_t Data = 0xAAAA;       //记录写入的数据

uint32_t NbrOfPage;           //记录写入多少页



volatile FLASH_Status FLASHStatus = FLASH_COMPLETE; //记录每次擦除的结果

volatile TestStatus MemoryProgramStatus = PASSED;   //记录整个测试结果



/*******************************************************************************

* Function Name  : Flash_Test

* Description    : Flash Program Test.

* Input          : None

* Return         : None

*******************************************************************************/

int Flash_Test(void)

{

    FLASH_Unlock(); //解锁



    NbrOfPage = (PAGE_WRITE_END_ADDR - PAGE_WRITE_START_ADDR) / FLASH_PAGE_SIZE; //计算要擦除多少页



    //FLASH_FLAG_BSY:指示忙状态标志；FLASH_FLAG_EOP：指示操作结束标志；FLASH_FLAG_PGERR：闪存程序错误标志；FLASH_FLAG_WRPRTERR：指示写保护错误标志

    FLASH_ClearFlag(FLASH_FLAG_BSY | FLASH_FLAG_EOP|FLASH_FLAG_PGERR |FLASH_FLAG_WRPRTERR); //清空所有标志位



    for(EraseCounter = 0; (EraseCounter < NbrOfPage) && (FLASHStatus == FLASH_COMPLETE); EraseCounter++) //按页擦除

    {

      FLASHStatus = FLASH_ErasePage(PAGE_WRITE_START_ADDR + (FLASH_PAGE_SIZE * EraseCounter));

    }



    Address = PAGE_WRITE_START_ADDR; //向内部FLASH写入数据起始地址



    while((Address < PAGE_WRITE_END_ADDR) && (FLASHStatus == FLASH_COMPLETE))

    {

      FLASHStatus = FLASH_ProgramHalfWord(Address, Data); //向指定地址写入半字

      Address = Address + 2;

    }



    FLASH_Lock(); //上锁



    Address = PAGE_WRITE_START_ADDR;



    while((Address < PAGE_WRITE_END_ADDR) && (MemoryProgramStatus != FAILED))

    {

      if((*(__IO uint16_t*) Address) != Data)

      {

        MemoryProgramStatus = FAILED;

      }

        Address += 2;

    }

    return MemoryProgramStatus;



}



/*******************************************************************************

* Function Name  : Flash_Test_Fast

* Description    : Flash Fast Program Test.(128Byte)

* Input          : None

* Return         : None

*******************************************************************************/

int Flash_Test_Fast(void)

{

    u8 i, Verity_Flag=0;

    u32 buf[32];



    for(i=0; i<32; i++)

    {

        buf[i] = i;

    }



    FLASH_Unlock_Fast(); //快速编程模式解锁



    FLASH_ErasePage_Fast(0x0800E000); //擦除指定闪存页，此处擦除0x0800E000这个地址所指定页



    printf("128Byte Page Erase Sucess\r\n");



    FLASH_BufReset(); //复位闪存缓冲区，即执行清除内部128字节缓存区操作



    FLASH_BufLoad(0x0800E000, buf[0], buf[1], buf[2], buf[3]); //向指定地址开始连续写入16字节数据（4字节/次操作，写的地址每次偏移量为4），然后执行加载到缓冲区

    FLASH_BufLoad(0x0800E000 + 0x10, buf[4], buf[5], buf[6], buf[7]);

    FLASH_BufLoad(0x0800E000 + 0x20, buf[8], buf[9], buf[10], buf[11]);

    FLASH_BufLoad(0x0800E000 + 0x30, buf[12], buf[13], buf[14], buf[15]);

    FLASH_BufLoad(0x0800E000 + 0x40, buf[16], buf[17], buf[18], buf[19]);

    FLASH_BufLoad(0x0800E000 + 0x50, buf[20], buf[21], buf[22], buf[23]);

    FLASH_BufLoad(0x0800E000 + 0x60, buf[24], buf[25], buf[26], buf[27]);

    FLASH_BufLoad(0x0800E000 + 0x70, buf[28], buf[29], buf[30], buf[31]);



    FLASH_ProgramPage_Fast(0x0800E000); //启动一次快速页编程动作，编程指定的闪存页



    printf("128Byte Page Program Sucess\r\n");



    FLASH_Lock_Fast();



    for(i=0; i<32; i++) //读编程地址数据校验

    {

        if(buf[i] == *(u32*)(0x0800E000 + 4*i))

        {

            Verity_Flag = 0;

        }

        else

        {

            Verity_Flag = 1;

            break;

        }

    }

    return Verity_Flag;

}

int main(void)

{

        Delay_Init();

        USART_Printf_Init(115200);



        printf("SystemClk:%d\r\n",SystemCoreClock);

        printf("This is flash example\r\n");



        if(Flash_Test()== PASSED)

         {

           printf("读写内部 FLASH 标准编程测试成功\r\n");

         }

        else

         {

           printf("读写内部 FLASH 标准编程测试失败\r\n");

         }



    if(Flash_Test_Fast())

    {

     printf("128Byte Page Verity Fail，快速编程失败\r\n");

    }

    else

    {

     printf("128Byte Page Verity Sucess，快速编程成功\r\n");

    }



      while(1)

      {

      }

}