RUF020N02 罗姆ＭＯＳＦＥＴ管深圳现货 13684964275伏生
最大額定值 (Ta=25ºC)
Rated parameters Standard value Conditions
Drain-Source voltage VDSS(V) 20
Gate-Source voltage VGSS(V) ±10
Drain current(continuous) ID(A) ±2
Source current(body Di) IS(A) 0.6
Total power dissipation PD(W) 0.8 Mounted on a ceramic board
Channel temperature Tch(°C) 150
Storage temperature Tstg(°C) -55 ~ +150 |
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