BSB017N03LX3 G替代型号PC003NG-E，30V150A 33mΩ
型号：PC003NG-E
电压电流：30V150A
内阻：33mΩ
封装：TO-220
Description：
This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge.It can be used in a wide variety of applications.
Features：
1) VDS=30V,ID=150A,RDS(ON)<3mΩ @VGS=10V
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra low RDS(ON).
5) Excellent package for good heat dissipation. |
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