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中微半导体与国内知名FAB合作开发的600V-1350V IGBT产品系列，广泛应用于电机和消费类领域。在正向和阻断状态下，我们的IGBT功率损耗极低，仅需低驱动功率便可发挥高效率。邱工：180 2833 7418
中微半导体提供以下IGBT参数选型、VCE：600V-1350V，VGE：5.5±V、5.8±V、6.2±V，IC(100℃)：7A-50A。 型号 封装 VCE(V) VGE(±V) IC(100℃)(A) CMS007G060DP3C TO-252 600 5.5 7
CMS007G060T63B TO-263 600 5.5 7
CMS007G060T2FA TO-220F 600 5.5 7
CMS015G060T63A TO-263 600 5.5 15
CMS015G060T2FA TO-220F 600 5.5 15
CMS020G060T63B TO-263 600 5.5 20
CMS020G060T2FA TO-220F 600 5.5 20
CMS020G060T47A TO-247 600 5.5 20
CMS030G060T47B TO-247 600 5.5 30
CMS030G060T3FA TO-3PF 600 5..5 30
CMS040G060T47A TO-247 600 5.5 40
CMS040G060T3FA TO-3PF 600 5.5 40
CMSG50N60CA TO-247 600 5.5 50
CMS050G060T47A TO-247 600 5.5 50
CMS015G120T3PA TO-3PN 1200 5.5 15
CMSG025N120CB TO-247 1200 5.8 25
CMS020G135T3PA TO-3PN 1350 5.5 20
CMS025G135T3PB TO-3PN 1350 6.2 25
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