G32R501与TMS320f280049 ESD测试报告对比，孰高孰低立见分晓

只看该作者 · 2025-5-25 22:55

#申请原创# #技术资源# @21小跑堂 G32R501与TMS320f280049 ESD测试报告对比，孰高孰低立见分晓

实验1：HBM人体放电模型测试实验

测试对象:1.Geehy_G32R501单芯片ESD方案，2.TMS320f280049单芯片ESD方案

测试方法：在MK2机台，根据芯片数据手册梳理所有管脚耐压值，电源、IO属性形成pinlist。梳理完pinlist，按照如下组合分配管脚，

All Other Pins To VSS(±)500V~8000V,Step 500V

All Other Pins To VSSA(±)500V~8000V,Step 500V

All Other Pins To VSSIO(±)500V~8000V,Step 500V

All Other Pins To VDD(1.2V)(±)500V~8000V,Step 500V

All Other Pins To VDDIO(3.6V)(±)500V~8000V,Step 500V

All Other Pins To VDDA(3.6V)(±)500V~8000V,Step 500V

IO To IO(±)500V~8000V,Step 500V

根据表格pin组合以及步进，pin组合是根据JS-001标准实施，MK2机台执行测试。

调试好自动化测试程序

需设置的参数为（以下来源于数据手册，可公开）：

Pin Group	Type	Pin(s)
VSS	GROUND	45,5,72,86
VSSA	GROUND	12,33
VSSIO	GROUND	82
VDDIO(3.6V)	POWER	3,47,70,80,88
VDD(1.2V)	POWER	4,46,71,87
VDDA(3.6V)	POWER	11,34
IP(3.6V)_A6	INPUT	6
IP(3.6V)_B2	INPUT	7
IP(3.6V)_B3	INPUT	8
IP(3.6V)_A2	INPUT	9
IP(3.6V)_A3	INPUT	10
IP(3.6V)_B11	INPUT	13
IP(3.6V)_A15	INPUT	14
IP(3.6V)_B10	INPUT	15
IP(3.6V)_A14	INPUT	16
IP(3.6V)_C4	INPUT	17
IP(3.6V)_A11	INPUT	18
IP(3.6V)_C0	INPUT	19
IP(3.6V)_A7	INPUT	20
IP(3.6V)_C2	INPUT	21
IP(3.6V)_A1	INPUT	22
IP(3.6V)_A0	INPUT	23
IP(0V)_VREFLOB	INPUT	26
IP(0V)_VREFLOA	INPUT	27
IP(3.6V)_C5	INPUT	28
IP(3.6V)_C1	INPUT	29
IP(3.6V)_A12	INPUT	30
IP(3.6V)_C3	INPUT	31
IP(3.6V)_B12	INPUT	32
IP(3.6V)_A5	INPUT	35
IP(3.6V)_A4	INPUT	36
IP(3.6V)_A8	INPUT	37
IP(3.6V)_A9	INPUT	38
IP(3.6V)_B4	INPUT	39
IP(3.6V)_A10	INPUT	40
IP(3.6V)_B0	INPUT	41
IP(3.6V)_B5	INPUT	42
IP(3.6V)_C12	INPUT	43
IP(3.6V)_C14	INPUT	44
IP(3.6V)_TCK	INPUT	60
IP(3.6V)_VREGENZ	INPUT	73
IO(3.6V)_GPIO28	OUTPUT	1
IO(3.6V)_XRSn	OUTPUT	2
IO(3.6V)_VREFHIB	OUTPUT	24
IO(3.6V)_VREFHIA	OUTPUT	25
IO(3.6V)_GPIO54	OUTPUT	48
IO(3.6V)_GPIO53	OUTPUT	49
IO(3.6V)_GPIO13	OUTPUT	50
IO(3.6V)_GPIO12	OUTPUT	51
IO(3.6V)_GPIO11	OUTPUT	52
IO(3.6V)_GPIO33	OUTPUT	53
IO(3.6V)_GPIO16	OUTPUT	54
IO(3.6V)_GPIO17	OUTPUT	55
IO(3.6V)_GPIO24	OUTPUT	56
IO(3.6V)_GPIO25	OUTPUT	57
IO(3.6V)_GPIO26	OUTPUT	58
IO(3.6V)_GPIO27	OUTPUT	59
IO(3.6V)_GPIO37	OUTPUT	61
IO(3.6V)_TMS	OUTPUT	62
IO(3.6V)_GPIO35	OUTPUT	63
IO(3.6V)_GPIO32	OUTPUT	64
IO(3.6V)_GPIO56	OUTPUT	65
IO(3.6V)_GPIO57	OUTPUT	66
IO(3.6V)_GPIO58	OUTPUT	67
IO(3.6V)_GPIO18	OUTPUT	68
IO(3.6V)_GPIO19	OUTPUT	69
IO(3.6V)_GPIO8	OUTPUT	74
IO(3.6V)_GPIO4	OUTPUT	75
IO(3.6V)_GPIO3	OUTPUT	76
IO(3.6V)_GPIO2	OUTPUT	77
IO(3.6V)_GPIO1	OUTPUT	78
IO(3.6V)_GPIO0	OUTPUT	79
IO(3.6V)_GPIO23	OUTPUT	81
IO(3.6V)_GPIO22	OUTPUT	83
IO(3.6V)_GPIO7	OUTPUT	84
IO(3.6V)_GPIO40	OUTPUT	85
IO(3.6V)_GPIO5	OUTPUT	89
IO(3.6V)_GPIO9	OUTPUT	90
IO(3.6V)_GPIO39	OUTPUT	91
IO(3.6V)_GPIO59	OUTPUT	92
IO(3.6V)_GPIO10	OUTPUT	93
IO(3.6V)_GPIO34	OUTPUT	94
IO(3.6V)_GPIO15	OUTPUT	95
IO(3.6V)_GPIO14	OUTPUT	96
IO(3.6V)_GPIO6	OUTPUT	97
IO(3.6V)_GPIO30	OUTPUT	98
IO(3.6V)_GPIO31	OUTPUT	99
IO(3.6V)_GPIO29	OUTPUT	100
IO		1,10,100,13,14,15,16,17,18,19,2,20,21,22,23,24,25,26,27,28,29,30,31,32,35,36,37,38,39,40,41,42,43,44,48,49,50,51,52,53,54,55,56,57,58,59,6,60,61,62,63,64,65,66,67,68,69,7,73,74,75,76,77,78,79,8,81,83,84,85,89,9,90,91,92,93,94,95,96,97,98,99

测试结果如下：

1. Geehy_G32R501单芯片HBM结果（ESD结果会有三方实验室报告，可以对外）：

Test condition	Sample Quantity	Passed Volts	IV Result Description
All Other Pins To VSS(±)500V~8000V,Step 500V	3	±8000V Load 10K Shunt	PASS
All Other Pins To VSSA(±)500V~8000V,Step 500V
All Other Pins To VSSIO(±)500V~8000V,Step 500V
All Other Pins To VDD(1.2V)(±)500V~8000V,Step 500V
All Other Pins To VDDIO(3.6V)(±)500V~8000V,Step 500V
All Other Pins To VDDA(3.6V)(±)500V~8000V,Step 500V
IO To IO(±)500V~8000V,Step 500V

2.TMS320f280049单芯片HBM结果：

Test condition	Sample Quantity	Passed Volts	IV Result Description
All Other Pins To VSS_PIN5(±)1000V~6500V,Step 500V	1 Load 10k shunt	±6000V	IO(4.6V)_FLT1 IV short fail at 6500V(Zap to IO) for #1
All Other Pins To VSS_PIN45(±)1000V~6500V,Step 500V
All Other Pins To VSS_PIN72(±)1000V~6500V,Step 500V
All Other Pins To VSS_PIN86(±)1000V~6500V,Step 500V
All Other Pins To VSSA_PIN12(±)1000V~6500V,Step 500V
All Other Pins To VSSA_PIN33(±)1000V~6500V,Step 500V
All Other Pins To VSS_SW(±)1000V~6500V,Step 500V
All Other Pins To VDD(1.5V)_PIN4(±)1000V~6500V,Step 500V
All Other Pins To VDD(1.5V)_PIN46(±)1000V~6500V,Step 500V
All Other Pins To VDD(1.5V)_PIN71(±)1000V~6500V,Step 500V
All Other Pins To VDD(1.5V)_PIN84(±)1000V~6500V,Step 500V
All Other Pins To VDDIO(4.6V)_PIN3(±)1000V~6500V,Step 500V
All Other Pins To VDDIO(4.6V)_PIN47(±)1000V~6500V,Step 500V
All Other Pins To VDDIO(4.6V)_PIN70(±)1000V~6500V,Step 500V
All Other Pins To VDDIO(4.6V)_PIN88(±)1000V~6500V,Step 500V
All Other Pins To VDDA(4.6V)_PIN11(±)1000V~6500V,Step 500V
All Other Pins To VDDA(4.6V)_PIN34(±)1000V~6500V,Step 500V
All Other Pins To VDDIO_SW(4.6V)(±)1000V~6500V,Step 500V
IO_Group_1 To IO_Group_1(±)1000V~6500V,Step 500V

实验2：CDM带电器件模型测试（ESD结果会有三方实验室报告，可以对外）

1、Geehy_G32R501单芯片CDM结果

Test condition	Sample Quantity	Passed Volts	IV Result Description
CDM 250V~2000V;Step:250V FOR ALL 100 PINS	3	±2000V	PASS

2、TMS320f280049单芯片CDM结果：

实验3：LU闩锁效应（ESD结果会有三方实验室报告，可以对外）

1、Geehy_G32R501单芯片LU结果

Trigger Mode	Test Pin Group	Sample Quantity	Tested Result	V or I Limits
I-Test(positive)	IP(0V)_VREFLOB	3	PASS +200mA	+2.4V
	IP(0V)_VREFLOA		PASS +200mA	+2.4V
	IP/IO(3.6V)		PASS +200mA	+5.4V
I-Test(negative)	IP(0V)_VREFLOB		PASS -200mA	-2.4V
	IP(0V)_VREFLOA		PASS -200mA	-2.4V
	IP/IO(3.6V)		PASS -200mA	-1.8V
Vsupply Over-voltage test	VDD(1.2V)		PASS +1.8 V	+600mA
Vsupply Over-voltage test	VDDIO(3.6V),VDDA(3.6V)		PASS +5.4 V	+600mA

2、TMS320f280049单芯片LU结果：

Trigger Mode	Test Pin Group	Sample Quantity	Tested Result	V or I Limits
I-Test(positive)	IO/IP4.6V	1	PASS +200mA	+6.900V
I-Test(negative)	IO/IP4.6V		PASS -200mA	-2.300V
Vsupply Over-voltage test	VCC 1.5V		PASS +2.250 V	+600mA
Vsupply Over-voltage test	VCC 4.6V		PASS +6.900 V	+600mA

总结

从整体的ESD测试结果来看，对比TMS320f280049单芯片ESD结果，G32R501在HBM/CDM均比TMS320f280049的高出多个level。从未来芯片应用上，抗ESD能力明显强于TI TMS320f280049，LU测试结果一致，两者比较接近。

总结起来，从HBM/CDM来看，G32R501抗静电能力远远优于TMS320f280049，可以支持用户应用于ESD要求高的场景。分开来讲：HBM高芯片能承受更高的人体静电电压（如>2000V，甚至8000V），降低因操作不当（如组装、维修）导致的损坏风险；CDM：在高速贴片、封装过程中不易因静电放电损坏（如>500V CDM是常见工业要求）。