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存储芯片

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楼主| tracy沈 发表于 2012-7-31 09:33 | 显示全部楼层 |阅读模式

Part Number(SRAM/PSRAM)	Part Number(DRAM)
EM610FV8S/T(1M bit 55NS)	AS4C4M16S(64M bit)
EM611FV16U(1M bit 55NS)	V54C3128164VEI(128M bit)
EM620FV8BS/T(2M bit 55NS)	V54C3256164VHI(256M bit)
EM621FV16BU(2M bit 55NS)	V58C2128164SE(128M bit)
EM641FV8FS(4M bit 55NS)	V58C2256804SI(256M bit)
EM643FV16FU(4M bit 55NS)	V58C2256164SI(256M bit)
EM680FV8BU(8M bit 55NS)	V58C2512804SD(512M bit)
EM681FV16BU(8M bit 55NS)	V58C2512164SD(512M bit)
EM6168FV16B(16M bit 55NS)	V59C1256804QI(256M bit)
EM784SU16ASP(8M bit 70NS)	V59C1256164QI(256M bit)
EM7164SU16BSP(16M bit70NS)	V59C1512804QD(512M bit)
EM7324SU16SP(32M bit 70NS)	V59C1512164QD(512M bit)
EM7644SU16ANP(64M bit70NS)	V59C1G01808QC(1G bit)
AS7C31026B(1M bit 10NS)	V59C1G01168QC(1G bit)
AS7C32096A(2M bit 10NS)
AS7C32098A(2M bit 10NS)
AS7C34096A(4M bit 10NS)
AS7C34098A(4M bit 10NS)
AS7C38096A(8M bit 10NS)
AS7C38098A(8M bit 10NS)

我公司是专业从事缓存芯片市场推广,代理的品牌来自美国，韩国以及台湾，产品种类有:
1.低功耗随机存储器 (Low Power SRAM):1M/2M/4M/8M/16M bit

2.高速静态随机存储器(High Speed SRAM):1M/2M/4M/8M bit

3.伪静态随机存储器 (Pseudo SRAM):1M/2M/4M/8M bit

4.动态同步随机存储器(SDRAM):64M/128M/256M bit

电话：021-31166585/31166589/31166591

手机：郭彩莲(15921611441) QQ号：1986047096

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