MSPML1306小练-从官方例程看FLASH的写入顺序

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#include "ti_msp_dl_config.h"



/* Address in main memory to write to */

#define MAIN_BASE_ADDRESS (0x00001000)



/* 8-bit data to write to flash */

uint8_t gData8 = 0x11;



/* 16-bit data to write to flash */

uint16_t gData16 = 0x2222;



/* 32-bit data to write to flash */

uint32_t gData32 = 0x33333333;



/* Array to write 64-bits to flash */

uint32_t gDataArray64[] = {0xABCDEF00, 0x12345678};



/* 32-bit data array to write to flash */

uint32_t gDataArray32[] = {0x00000000, 0x11111111, 0x22222222, 0x33333333,

    0x4444, 0x55555, 0x66, 0x77, 0x8, 0x9};



volatile DL_FLASHCTL_COMMAND_STATUS gCmdStatus;



int main(void)

{

    SYSCFG_DL_init();



    /* Unprotect sector in main memory*/

    DL_FlashCTL_unprotectSector(

        FLASHCTL, MAIN_BASE_ADDRESS, DL_FLASHCTL_REGION_SELECT_MAIN);

    /* Erase sector in main memory */

    gCmdStatus = DL_FlashCTL_eraseMemoryFromRAM(

        FLASHCTL, MAIN_BASE_ADDRESS, DL_FLASHCTL_COMMAND_SIZE_SECTOR);

    if (gCmdStatus == DL_FLASHCTL_COMMAND_STATUS_FAILED) {

        /* If command was not successful, set a breakpoint */

        __BKPT(0);

    }



    /* 8-bit write to flash in main memory without ECC */

    DL_FlashCTL_unprotectSector(

        FLASHCTL, MAIN_BASE_ADDRESS, DL_FLASHCTL_REGION_SELECT_MAIN);

    gCmdStatus = DL_FlashCTL_programMemoryFromRAM8(

        FLASHCTL, MAIN_BASE_ADDRESS, &gData8);

    if (gCmdStatus == DL_FLASHCTL_COMMAND_STATUS_FAILED) {

        /* If command was not successful, set a breakpoint */

        __BKPT(0);

    }



    /*

     * 16-bit write to flash in main memory without ECC.

     * The target program address must be a flash word address

     * (8-byte aligned), so we increase the address in increments of 8.

     */

    DL_FlashCTL_unprotectSector(

        FLASHCTL, MAIN_BASE_ADDRESS, DL_FLASHCTL_REGION_SELECT_MAIN);

    gCmdStatus = DL_FlashCTL_programMemoryFromRAM16(

        FLASHCTL, (MAIN_BASE_ADDRESS + 8), &gData16);

    if (gCmdStatus == DL_FLASHCTL_COMMAND_STATUS_FAILED) {

        /* If command was not successful, set a breakpoint */

        __BKPT(0);

    }



    /* 32-bit write to flash in main memory without ECC */

    DL_FlashCTL_unprotectSector(

        FLASHCTL, MAIN_BASE_ADDRESS, DL_FLASHCTL_REGION_SELECT_MAIN);

    gCmdStatus = DL_FlashCTL_programMemoryFromRAM32(

        FLASHCTL, (MAIN_BASE_ADDRESS + 16), &gData32);

    if (gCmdStatus == DL_FLASHCTL_COMMAND_STATUS_FAILED) {

        /* If command was not successful, set a breakpoint */

        __BKPT(0);

    }



    /*

     * 64-bit write to flash in main memory without ECC.

     * Data must be loaded 32-bits at a time, but a single word program

     * is executed

     */

    DL_FlashCTL_unprotectSector(

        FLASHCTL, MAIN_BASE_ADDRESS, DL_FLASHCTL_REGION_SELECT_MAIN);

    gCmdStatus = DL_FlashCTL_programMemoryFromRAM64(

        FLASHCTL, (MAIN_BASE_ADDRESS + 24), &gDataArray64[0]);

    if (gCmdStatus == DL_FLASHCTL_COMMAND_STATUS_FAILED) {

        __BKPT(0);

    }



    /* If writes successful, set LED */

    DL_GPIO_clearPins(GPIO_LEDS_PORT, GPIO_LEDS_USER_LED_1_PIN);



    /*

     * Set a breakpoint to check the contents of MAIN_BASE_ADDRESS:

     * FF FF FF 11

     * FF FF FF FF

     * FF FF 22 22

     * FF FF FF FF

     * 33 33 33 33

     * FF FF FF FF

     * AB CD EF 00

     * 12 34 56 78

     */

    __BKPT(0);



    while (1) {

        __WFI();

    }

如上所述是一段操作Flash的基于MSPM0L的例程，从此可以看出flash的操作顺序：
1、解锁受保护的扇区
2、擦除扇区
3、写入数据
FLASH擦写操作无需SYSCONFIG的配置，可以直接调用函数来完成，每次执行完成擦写操作的时候，FLASH的写保护寄存器都会置位，也就是自动保护起来，所以下一次操作之前都需要重新解锁。