想用pspice做场效应管MTP2P50E和BUK456800的电路仿真,但是没有它们的模型,想用一个现成的管子修改一下,挑了一个F1020,edit pspice model后发现模型的描述看不太懂,不太明白怎么修改,还请达人帮忙啊! <br />模型表述如下:<br />*POLYFET RF DEVICES<br />*FEB 15 1994<br />*PHONE:(805)484-4210; FAX:(805)494-3393 CONTACT:MR. S.K. LEONG<br />*HIGH POWER, HIGH FREQUENCY, RF N-CHANNEL VERTICAL DMOS MOSFET<br />*TO GENERATE S PARAMETER MATCHING DATA SHEET, SET VG=3.58V FOR IDQ=800MA<br />*<br />*MODEL APPLICABLE FOR ALL F1B 4 DIE IN AP AND AK PACKAGE. F1021 USE<br />*BELOW AS EXAMPLE.<br />* NOTE:- HP/EESOF USES 'GATE DRAIN SOURCE' ORDER<br />* ( ;D G S )<br />.SUBCKT F1021/PF 20 10 30<br />LG 10 11 0.87N<br />RGATE 11 12 0.61<br />CG 10 30 0.12P<br />CRSS 12 17 14.2P<br />CISS 12 14 130P<br />LS 14 30 0.09N<br />CS 14 30 0.06P<br />LD 17 20 0.75N<br />CD 20 30 0.45P<br />R_RC 16 17 8.2<br />C_RC 14 16 61P<br />MOS 13 12 14 14 F1021MOS L=1.1U W=0.24 ;D G S B LEVEL1<br />JFET 17 14 13 F1021JF ;D G S<br />DBODY 14 17 F1021DB ;P N<br />.MODEL F1021MOS NMOS (VTO=3 KP=1.7E-5 LAMBDA=0.1 RD=0.1 RS=0.09)<br />.MODEL F1021JF NJF (VTO=-6.8 BETA=0.2 LAMBDA=5)<br />.MODEL F1021DB D (CJO=192P RS=0.25 VJ=0.7 M=0.35 BV=65)<br />.ENDS<br /><br /><br /><br /><br /> |
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