计算掉电時储存512字节数据所需时间和电容值

发表于 2019-5-12 22:59

#include "Mini51Series.h"

#define PAGE_SIZE 128

uint32_t i, u32DFBADR, u32Data[PAGE_SIZE];

void SYS_Init(void)

{

/* Unlock protected registers */

SYS_UnlockReg();

P01 = 1; // Set init state to high

GPIO_SetMode(P0, BIT1, GPIO_PMD_OUTPUT); // Set to output mode

/* Enable FMC ISP function */

FMC_Open();

/* Enable BOD function and setting Brown-out voltage level*/

SYS_EnableBOD(SYS_BODCR_BOD_INTERRUPT_EN, SYS_BODCR_BOD_VL_4_4V);

NVIC_EnableIRQ(BOD_IRQn); // Enable BOD interrupt

/* Lock protected registers */

SYS_LockReg();

}

void BOD_IRQHandler(void)

{

P01 = 0; // Set P0.1 state to low.

SYS->BODCTL |= SYS_BODCR_BOD_INTF_Msk; // Clear BOD interrupt flag.

// Disable BOD to avoid into BOD interrupt again.

SYS_DisableBOD();

NVIC_DisableIRQ(BOD_IRQn); // Disable BOD interrupt

// Write test pattern to fill the whole page

for(i = 0; i < PAGE_SIZE; i++)

{

FMC_Write(u32DFBADR + (i*4), u32Data[i]);

}

P01 = 1; // Set P0.1 state to high.

}

发表于 2019-5-12 22:59

复制

int main(void)

{

/* Before use this sample code, we need to set data flash for

erasing and writing test pattern */

/* Init System, set GPIO mode and enable BOD function*/

SYS_Init();

/* Fill test pattern */

for(i = 0; i < PAGE_SIZE; i++)

{

u32Data[i] = i;

}

// Unlock protected registers for flash erase and program.

SYS_UnlockReg();

// Read data flash base address.

u32DFBADR = FMC_ReadDataFlashBaseAddr();

/* Erase one page data flash before write test pattern*/

FMC_Erase(u32DFBADR);

while (1);

}

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