CY7C1168V18相关资料

Functional Description
The CY7C1166V18, CY7C1177V18, CY7C1168V18, and
CY7C1170V18 are 1.8V Synchronous Pipelined SRAMs
equipped with DDR-II+ architecture. The DDR-II+ consists of an
SRAM core with an advanced synchronous peripheral circuitry.
Addresses for read and write are latched on alternate rising
edges of the input (K) clock. Write data is registered on the rising
edges of both K and K. Read data is driven on the rising edges
of K and K. Each address location is associated with two 8-bit
words (CY7C1166V18), or 9-bit words (CY7C1177V18), or 18-bit
words (CY7C1168V18), or 36-bit words (CY7C1170V18) that
burst sequentially into or out of the device.

太专业的英文了

好难懂，谁给翻译一下