我是学计算机的，不太了解电子工程中的术语，请哪位打侠帮助解释一下，下面抄录STM32F103xx数据手册中关于EMC参数的说明与测试部分： EMC characteristics Susceptibility tests are performed on a sample basis during device characterization.
Functional EMS (electromagnetic susceptibility) While a simple application is executed on the device (toggling 2 LEDs through I/O ports). the device is stressed by two electromagnetic events until a failure occurs. The failure is indicated by the LEDs: Electrostatic discharge (ESD)(positive and negative) is applied to all device pins until a functional disturbance occurs. This test is compliant with the IEC 1000-4-2 standard. FTB:A Burst of Fast Transient voltage (positive and negative) is applied to VDD and VSS through a 100 pF capacitor, until a functional disturbance occurs. This test is compliant with the IEC 1000-4-4 standard.
A device reset allows normal operations to be resumed.
The test results are given in Table 29. They are based on the EMS levels and classes defined in application note AN1709.
Table 29. EMS characteristics
Symbol
Parameter
Conditions
Level/Class
VFESD
Voltage limits to be applied on any I/O pin to induce a functional disturbance
VDD = 3.3 V, TA = +25 C, fHCLK=48 MHz, conforms to IEC 1000-4-2
2B
VEFTB
Fast transient voltage burst limits to be applied through 100 pF on VDD and VSS pins to induce a functional disturbance
VDD = 3.3 V, TA = +25 C, fHCLK=48 MHz, conforms to IEC 1000-4-4
4A
Designing hardened software to avoid noise problems EMC characterization and optimization are performed at component level with a typical application environment and simplified MCU software. It should be noted that good EMC performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and prequalification tests in relation with the EMC level requested for his application.
Software recommendations The software flowchart must include the management of runaway conditions such as: - Corrupted program counter - Unexpected reset - Critical Data corruption (control registers...)
Prequalification trials Most of the common failures (unexpected reset and program counter corruption) can be reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1 second.
To complete these trials, ESD stress can be applied directly on the device, over the range of specification values. When unexpected behavior is detected, the software can be hardened to prevent unrecoverable errors occurring (see application note AN1015).
Table 46. ADC accuracy - limited test conditions Symbol Parameter Typ Max Unit ET Total unadjusted error ±1.3 ±2 LSB
关键是，Test conditions为： fPCLK2 = 56 MHz, fADC = 14 MHz, RAIN < 10 kΩ, VDDA = 3 V to 3.6 V TA = 25 °C Measurements made after ADC calibration VREF+ = VDDA
Parameter Parameter Name Max Unit INL Integral nonlinearity ±2 LSB 所以只好使用软件来做平均： Integral nonlinearity with 8x software oversampling，得到 Max Unit ±1 LSB
新的Datasheet-LM3S2948.pdf
Parameter Parameter Name Max Unit INL Integral nonlinearity ±1 LSB
Luminary的ADC的优势是：还支持差分输入（Single-ended and differential-input configurations）
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