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请教香帮主---大页NAND接103ZET6的问题

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楼主
damiaa|  楼主 | 2009-8-13 15:12 | 只看该作者 回帖奖励 |倒序浏览 |阅读模式
本帖最后由 damiaa 于 2009-8-13 15:29 编辑

我把小页的程序改了一下改成大页,只能读写一页正确.后面就不行啦.
芯片是K9F1G08UOA.

//头文件FSMC_NAND.H
#ifndef __FSMC_NAND_H
#define __FSMC_NAND_H
/* Includes ------------------------------------------------------------------*/
#include "stm32f10x.h"
/* Exported types ------------------------------------------------------------*/
typedef struct
{
  uint8_t Maker_ID;
  uint8_t Device_ID;
  uint8_t Third_ID;
  uint8_t Fourth_ID;
}NAND_IDTypeDef;
typedef struct
{
  uint16_t Zone;
  uint16_t Block;
  uint16_t Page;
} NAND_ADDRESS;
/* Exported constants --------------------------------------------------------*/
/* NAND Area definition  for STM3210E-EVAL Board RevD */
#define CMD_AREA                   (uint32_t)(1<<16)  /* A16 = CLE  high */
#define ADDR_AREA                  (uint32_t)(1<<17)  /* A17 = ALE high */
#define DATA_AREA                  ((uint32_t)0x00000000)
/* FSMC NAND memory command */
#define NAND_CMD_AREA_A            ((uint8_t)0x00)
#define NAND_CMD_AREA_B            ((uint8_t)0x01)
#define NAND_CMD_AREA_C            ((uint8_t)0x50)
#define NAND_CMD_AREA_TRUE1        ((uint8_t)0x30)
#define NAND_CMD_WRITE0            ((uint8_t)0x80)
#define NAND_CMD_WRITE_TRUE1       ((uint8_t)0x10)
#define NAND_CMD_ERASE0            ((uint8_t)0x60)
#define NAND_CMD_ERASE1            ((uint8_t)0xD0)
#define NAND_CMD_READID            ((uint8_t)0x90)
#define NAND_CMD_STATUS            ((uint8_t)0x70)
#define NAND_CMD_LOCK_STATUS       ((uint8_t)0x7A)
#define NAND_CMD_RESET             ((uint8_t)0xFF)
/* NAND memory status */
#define NAND_VALID_ADDRESS         ((uint32_t)0x00000100)
#define NAND_INVALID_ADDRESS       ((uint32_t)0x00000200)
#define NAND_TIMEOUT_ERROR         ((uint32_t)0x00000400)
#define NAND_BUSY                  ((uint32_t)0x00000000)
#define NAND_ERROR                 ((uint32_t)0x00000001)
#define NAND_READY                 ((uint32_t)0x00000040)
/* FSMC NAND memory parameters 大页必须更改*/
//#define NAND_PAGE_SIZE             ((uint16_t)0x0200) /* 512 bytes per page w/o Spare Area */
//#define NAND_BLOCK_SIZE            ((uint16_t)0x0020) /* 32x512 bytes pages per block */
//#define NAND_ZONE_SIZE             ((uint16_t)0x0400) /* 1024 Block per zone */
//#define NAND_SPARE_AREA_SIZE       ((uint16_t)0x0010) /* last 16 bytes as spare area */
//#define NAND_MAX_ZONE              ((uint16_t)0x0004) /* 4 zones of 1024 block */
#define NAND_PAGE_SIZE             ((uint16_t)0x0800) /* 2048 bytes per page w/o Spare Area */
#define NAND_BLOCK_SIZE            ((uint16_t)0x0040) /* 64x2048 bytes pages per block */
#define NAND_ZONE_SIZE             ((uint16_t)0x0400) /* 1024 Block per zone */
#define NAND_SPARE_AREA_SIZE       ((uint16_t)0x0040) /* last 64 bytes as spare area */
#define NAND_MAX_ZONE              ((uint16_t)0x0001) /* 1 zones of 1024 block */
/* FSMC NAND memory address computation */
#define ADDR_1st_CYCLE(ADDR)       (uint8_t)((ADDR)& 0xFF)               /* 1st addressing cycle */
#define ADDR_2nd_CYCLE(ADDR)       (uint8_t)(((ADDR)& 0xFF00) >> 8)      /* 2nd addressing cycle */
#define ADDR_3rd_CYCLE(ADDR)       (uint8_t)(((ADDR)& 0xFF0000) >> 16)   /* 3rd addressing cycle */
#define ADDR_4th_CYCLE(ADDR)       (uint8_t)(((ADDR)& 0xFF000000) >> 24) /* 4th addressing cycle */
/* Exported macro ------------------------------------------------------------*/
/* Exported functions ------------------------------------------------------- */
void FSMC_NAND_Init(void);
void FSMC_NAND_ReadID(NAND_IDTypeDef* NAND_ID);
uint32_t FSMC_NAND_WriteLargePage(uint8_t *pBuffer, NAND_ADDRESS Address, uint32_t NumPageToWrite);
uint32_t FSMC_NAND_ReadLargePage (uint8_t *pBuffer, NAND_ADDRESS Address, uint32_t NumPageToRead);
uint32_t FSMC_NAND_WriteLargeSpareArea(uint8_t *pBuffer, NAND_ADDRESS Address, uint32_t NumSpareAreaTowrite);
uint32_t FSMC_NAND_ReadLargeSpareArea(uint8_t *pBuffer, NAND_ADDRESS Address, uint32_t NumSpareAreaToRead);
uint32_t FSMC_NAND_EraseLargeBlock(NAND_ADDRESS Address);
uint32_t FSMC_NAND_Reset(void);
uint32_t FSMC_NAND_GetStatus(void);
uint32_t FSMC_NAND_ReadStatus(void);
uint32_t FSMC_NAND_AddressIncrement(NAND_ADDRESS* Address);
#endif /* __FSMC_NAND_H */
沙发
damiaa|  楼主 | 2009-8-13 15:20 | 只看该作者
//FSMC_NAND.C文件

#include "fsmc_largenand.h"

/** @addtogroup STM32F10x_StdPeriph_Examples
  * @{
  */

/** @addtogroup FSMC_NAND
  * @{
  */

/* Private typedef -----------------------------------------------------------*/
/* Private define ------------------------------------------------------------*/

#define FSMC_Bank_NAND     FSMC_Bank2_NAND
#define Bank_NAND_ADDR     Bank2_NAND_ADDR
#define Bank2_NAND_ADDR    ((uint32_t)0x70000000)

/* Private macro -------------------------------------------------------------*/
#define ROW_ADDRESS (Address.Page + (Address.Block + (Address.Zone * NAND_ZONE_SIZE)) * NAND_BLOCK_SIZE)

/* Private variables ---------------------------------------------------------*/
/* Private function prototypes -----------------------------------------------*/
/* Private functions ---------------------------------------------------------*/

/**
  * @brief  Configures the FSMC and GPIOs to inte**ce with the NAND memory.
  *   This function must be called before any write/read operation on the NAND.
  * @param  None
  * @retval None
  */
void FSMC_NAND_Init(void)
{
  GPIO_InitTypeDef GPIO_InitStructure;
  FSMC_NANDInitTypeDef FSMC_NANDInitStructure;
  FSMC_NAND_PCCARDTimingInitTypeDef  p;
  
  RCC_APB2PeriphClockCmd(RCC_APB2Periph_GPIOD | RCC_APB2Periph_GPIOE |
                         RCC_APB2Periph_GPIOF | RCC_APB2Periph_GPIOG, ENABLE);
  
/*-- GPIO Configuration ------------------------------------------------------*/
/* CLE, ALE, D0->D3, NOE, NWE and NCE2  NAND pin configuration  */
  GPIO_InitStructure.GPIO_Pin =  GPIO_Pin_11 | GPIO_Pin_12 | GPIO_Pin_14 | GPIO_Pin_15 |  
                                 GPIO_Pin_0 | GPIO_Pin_1 | GPIO_Pin_4 | GPIO_Pin_5 |
                                 GPIO_Pin_7;
  GPIO_InitStructure.GPIO_Speed = GPIO_Speed_50MHz;
  GPIO_InitStructure.GPIO_Mode = GPIO_Mode_AF_PP;
  GPIO_Init(GPIOD, &GPIO_InitStructure);
/* D4->D7 NAND pin configuration  */  
  GPIO_InitStructure.GPIO_Pin = GPIO_Pin_7 | GPIO_Pin_8 | GPIO_Pin_9 | GPIO_Pin_10;
  GPIO_Init(GPIOE, &GPIO_InitStructure);
/* NWAIT NAND pin configuration */
  GPIO_InitStructure.GPIO_Pin = GPIO_Pin_6;
  GPIO_InitStructure.GPIO_Speed = GPIO_Speed_50MHz;
  GPIO_InitStructure.GPIO_Mode = GPIO_Mode_IPU;
  GPIO_Init(GPIOD, &GPIO_InitStructure);
/* INT2 NAND pin configuration */  
  GPIO_InitStructure.GPIO_Pin = GPIO_Pin_6;
  GPIO_Init(GPIOG, &GPIO_InitStructure);
  /*-- FSMC Configuration ------------------------------------------------------*/
  p.FSMC_SetupTime = 0x1;
  p.FSMC_WaitSetupTime = 0x3;
  p.FSMC_HoldSetupTime = 0x2;
  p.FSMC_HiZSetupTime = 0x1;
  FSMC_NANDInitStructure.FSMC_Bank = FSMC_Bank2_NAND;
  FSMC_NANDInitStructure.FSMC_Waitfeature = FSMC_Waitfeature_Enable;
  FSMC_NANDInitStructure.FSMC_MemoryDataWidth = FSMC_MemoryDataWidth_8b;
  FSMC_NANDInitStructure.FSMC_ECC = FSMC_ECC_Enable;
  FSMC_NANDInitStructure.FSMC_ECCPageSize = FSMC_ECCPageSize_2048Bytes;//更改
  FSMC_NANDInitStructure.FSMC_TCLRSetupTime = 0x00;
  FSMC_NANDInitStructure.FSMC_TARSetupTime = 0x00;
  FSMC_NANDInitStructure.FSMC_CommonSpaceTimingStruct = &p;
  FSMC_NANDInitStructure.FSMC_AttributeSpaceTimingStruct = &p;
  FSMC_NANDInit(&FSMC_NANDInitStructure);
  /* FSMC NAND Bank Cmd Test */
  FSMC_NANDCmd(FSMC_Bank2_NAND, ENABLE);
}
/**
  * @brief  Reads NAND memory's ID.
  * @param  NAND_ID: pointer to a NAND_IDTypeDef structure which will hold
  *                  the Manufacturer and Device ID.  
  * @retval None
  */
void FSMC_NAND_ReadID(NAND_IDTypeDef* NAND_ID)
{
  uint32_t data = 0;
  /* Send Command to the command area */
  *(__IO uint8_t *)(Bank_NAND_ADDR | CMD_AREA) = 0x90;
  *(__IO uint8_t *)(Bank_NAND_ADDR | ADDR_AREA) = 0x00;
   /* Sequence to read ID from NAND flash */
   data = *(__IO uint32_t *)(Bank_NAND_ADDR | DATA_AREA);
   NAND_ID->Maker_ID   = ADDR_1st_CYCLE (data);
   NAND_ID->Device_ID  = ADDR_2nd_CYCLE (data);
   NAND_ID->Third_ID   = ADDR_3rd_CYCLE (data);
   NAND_ID->Fourth_ID  = ADDR_4th_CYCLE (data);
}
/**
  * @brief   This routine is for writing one or several 512 Bytes Page size.
  * @param  pBuffer: pointer on the Buffer containing data to be written
  * @param  Address: First page address
  * @param  NumPageToWrite: Number of page to write  
  * @retval New status of the NAND operation. This parameter can be:
  *              - NAND_TIMEOUT_ERROR: when the previous operation generate
  *                a Timeout error
  *              - NAND_READY: when memory is ready for the next operation
  *                And the new status of the increment address operation. It can be:
  *              - NAND_VALID_ADDRESS: When the new address is valid address
  *              - NAND_INVALID_ADDRESS: When the new address is invalid address  
  */
uint32_t FSMC_NAND_WriteLargePage(uint8_t *pBuffer, NAND_ADDRESS Address, uint32_t NumPageToWrite)
{
  uint32_t index = 0x00, numpagewritten = 0x00, addressstatus = NAND_VALID_ADDRESS;
  uint32_t status = NAND_READY, size = 0x00;
  while((NumPageToWrite != 0x00) && (addressstatus == NAND_VALID_ADDRESS) && (status == NAND_READY))
  {
    /* Page write command and address */
    *(__IO uint8_t *)(Bank_NAND_ADDR | CMD_AREA) = NAND_CMD_AREA_A;
    *(__IO uint8_t *)(Bank_NAND_ADDR | CMD_AREA) = NAND_CMD_WRITE0;
    *(__IO uint8_t *)(Bank_NAND_ADDR | ADDR_AREA) = 0x00;     
    *(__IO uint8_t *)(Bank_NAND_ADDR | ADDR_AREA) = ADDR_1st_CYCLE(ROW_ADDRESS); //
    *(__IO uint8_t *)(Bank_NAND_ADDR | ADDR_AREA) = ADDR_2nd_CYCLE(ROW_ADDRESS); //
    *(__IO uint8_t *)(Bank_NAND_ADDR | ADDR_AREA) = ADDR_3rd_CYCLE(ROW_ADDRESS); //更改
    *(__IO uint8_t *)(Bank_NAND_ADDR | ADDR_AREA) = ADDR_4th_CYCLE(ROW_ADDRESS); //
    /* Calculate the size */
    size = NAND_PAGE_SIZE + (NAND_PAGE_SIZE * numpagewritten);
    /* Write data */
    for(; index < size; index++)
    {
      *(__IO uint8_t *)(Bank_NAND_ADDR | DATA_AREA) = pBuffer[index];
    }   
    *(__IO uint8_t *)(Bank_NAND_ADDR | CMD_AREA) = NAND_CMD_WRITE_TRUE1;
    /* Check status for successful operation */
    status = FSMC_NAND_GetStatus();
    if(status == NAND_READY)
    {
      numpagewritten++;
      NumPageToWrite--;
      /* Calculate Next small page Address */
      addressstatus = FSMC_NAND_AddressIncrement(&Address);
    }
  }
  return (status | addressstatus);
}

使用特权

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板凳
damiaa|  楼主 | 2009-8-13 15:22 | 只看该作者
/**  * @brief   This routine is for sequential read from one or several 512 Bytes Page size.
  * @param  pBuffer: pointer on the Buffer to fill
  * @param  Address: First page address
  * @param  NumPageToRead: Number of page to read  
  * @retval New status of the NAND operation. This parameter can be:
  *              - NAND_TIMEOUT_ERROR: when the previous operation generate
  *                a Timeout error
  *              - NAND_READY: when memory is ready for the next operation
  *                And the new status of the increment address operation. It can be:
  *              - NAND_VALID_ADDRESS: When the new address is valid address
  *              - NAND_INVALID_ADDRESS: When the new address is invalid address*/
uint32_t FSMC_NAND_ReadLargePage(uint8_t *pBuffer, NAND_ADDRESS Address, uint32_t NumPageToRead)
{
  uint32_t index = 0x00, numpageread = 0x00, addressstatus = NAND_VALID_ADDRESS;
  uint32_t status = NAND_READY, size = 0x00;
  while((NumPageToRead != 0x0) && (addressstatus == NAND_VALID_ADDRESS))
  {
    /* Page Read command and page address */
    *(__IO uint8_t *)(Bank_NAND_ADDR | CMD_AREA) = NAND_CMD_AREA_A; //地址
    *(__IO uint8_t *)(Bank_NAND_ADDR | ADDR_AREA) = 0x00;  //命令
    *(__IO uint8_t *)(Bank_NAND_ADDR | ADDR_AREA) = ADDR_1st_CYCLE(ROW_ADDRESS);
    *(__IO uint8_t *)(Bank_NAND_ADDR | ADDR_AREA) = ADDR_2nd_CYCLE(ROW_ADDRESS); //访问地址
    *(__IO uint8_t *)(Bank_NAND_ADDR | ADDR_AREA) = ADDR_3rd_CYCLE(ROW_ADDRESS);
    *(__IO uint8_t *)(Bank_NAND_ADDR | ADDR_AREA) = ADDR_4th_CYCLE(ROW_ADDRESS);
    *(__IO uint8_t *)(Bank_NAND_ADDR | CMD_AREA) = NAND_CMD_AREA_TRUE1;  //命令
    /* Calculate the size */
    size = NAND_PAGE_SIZE + (NAND_PAGE_SIZE * numpageread);   
    /* Get Data into Buffer */   
    for(; index < size; index++)
    {
      pBuffer[index]= *(__IO uint8_t *)(Bank_NAND_ADDR | DATA_AREA);
    }
    numpageread++;   
    NumPageToRead--;
    /* Calculate page address */
    addressstatus = FSMC_NAND_AddressIncrement(&Address);
  }
  status = FSMC_NAND_GetStatus();
  return (status | addressstatus);
}
/**
  * @brief   This routine write the spare area information for the specified
  *         pages addresses.  
  * @param  pBuffer: pointer on the Buffer containing data to be written
  * @param  Address: First page address
  * @param  NumSpareAreaTowrite: Number of Spare Area to write
  * @retval New status of the NAND operation. This parameter can be:
  *              - NAND_TIMEOUT_ERROR: when the previous operation generate
  *                a Timeout error
  *              - NAND_READY: when memory is ready for the next operation
  *                And the new status of the increment address operation. It can be:
  *              - NAND_VALID_ADDRESS: When the new address is valid address
  *              - NAND_INVALID_ADDRESS: When the new address is invalid address
  */
uint32_t FSMC_NAND_WriteLargeSpareArea(uint8_t *pBuffer, NAND_ADDRESS Address, uint32_t NumSpareAreaTowrite)
{
  uint32_t index = 0x00, numsparesreawritten = 0x00, addressstatus = NAND_VALID_ADDRESS;
  uint32_t status = NAND_READY, size = 0x00;
  while((NumSpareAreaTowrite != 0x00) && (addressstatus == NAND_VALID_ADDRESS) && (status == NAND_READY))
  {
    /* Page write Spare area command and address */
    *(__IO uint8_t *)(Bank_NAND_ADDR | CMD_AREA) = NAND_CMD_AREA_C;
    *(__IO uint8_t *)(Bank_NAND_ADDR | CMD_AREA) = NAND_CMD_WRITE0;
    *(__IO uint8_t *)(Bank_NAND_ADDR | ADDR_AREA) = 0x00;
    *(__IO uint8_t *)(Bank_NAND_ADDR | ADDR_AREA) = ADDR_1st_CYCLE(ROW_ADDRESS);
    *(__IO uint8_t *)(Bank_NAND_ADDR | ADDR_AREA) = ADDR_2nd_CYCLE(ROW_ADDRESS);
    *(__IO uint8_t *)(Bank_NAND_ADDR | ADDR_AREA) = ADDR_3rd_CYCLE(ROW_ADDRESS);
    *(__IO uint8_t *)(Bank_NAND_ADDR | ADDR_AREA) = ADDR_4th_CYCLE(ROW_ADDRESS);
    /* Calculate the size */
    size = NAND_SPARE_AREA_SIZE + (NAND_SPARE_AREA_SIZE * numsparesreawritten);
    /* Write the data */
    for(; index < size; index++)
    {
      *(__IO uint8_t *)(Bank_NAND_ADDR | DATA_AREA) = pBuffer[index];
    }
    *(__IO uint8_t *)(Bank_NAND_ADDR | CMD_AREA) = NAND_CMD_WRITE_TRUE1;
    /* Check status for successful operation */
    status = FSMC_NAND_GetStatus();
    if(status == NAND_READY)
    {
      numsparesreawritten++;
      NumSpareAreaTowrite--;
      /* Calculate Next page Address */
      addressstatus = FSMC_NAND_AddressIncrement(&Address);
    }
  }
  return (status | addressstatus);
}
/**
  * @brief   This routine read the spare area information from the specified
  *         pages addresses.  
  * @param  pBuffer: pointer on the Buffer to fill
  * @param  Address: First page address
  * @param  NumSpareAreaToRead: Number of Spare Area to read
  * @retval New status of the NAND operation. This parameter can be:
  *              - NAND_TIMEOUT_ERROR: when the previous operation generate
  *                a Timeout error
  *              - NAND_READY: when memory is ready for the next operation
  *                And the new status of the increment address operation. It can be:
  *              - NAND_VALID_ADDRESS: When the new address is valid address
  *              - NAND_INVALID_ADDRESS: When the new address is invalid address*/
uint32_t FSMC_NAND_ReadLargeSpareArea(uint8_t *pBuffer, NAND_ADDRESS Address, uint32_t NumSpareAreaToRead)
{
  uint32_t numsparearearead = 0x00, index = 0x00, addressstatus = NAND_VALID_ADDRESS;
  uint32_t status = NAND_READY, size = 0x00;
  while((NumSpareAreaToRead != 0x0) && (addressstatus == NAND_VALID_ADDRESS))
  {     
    /* Page Read command and page address */
    *(__IO uint8_t *)(Bank_NAND_ADDR | CMD_AREA) = NAND_CMD_AREA_C;
    *(__IO uint8_t *)(Bank_NAND_ADDR | ADDR_AREA) = 0x00;
    *(__IO uint8_t *)(Bank_NAND_ADDR | ADDR_AREA) = ADDR_1st_CYCLE(ROW_ADDRESS);
    *(__IO uint8_t *)(Bank_NAND_ADDR | ADDR_AREA) = ADDR_2nd_CYCLE(ROW_ADDRESS);
    *(__IO uint8_t *)(Bank_NAND_ADDR | ADDR_AREA) = ADDR_3rd_CYCLE(ROW_ADDRESS);
    *(__IO uint8_t *)(Bank_NAND_ADDR | ADDR_AREA) = ADDR_4th_CYCLE(ROW_ADDRESS);
    *(__IO uint8_t *)(Bank_NAND_ADDR | CMD_AREA) = NAND_CMD_AREA_TRUE1;
    /* Data Read */
    size = NAND_SPARE_AREA_SIZE +  (NAND_SPARE_AREA_SIZE * numsparearearead);
    /* Get Data into Buffer */
    for ( ;index < size; index++)
    {
      pBuffer[index] = *(__IO uint8_t *)(Bank_NAND_ADDR | DATA_AREA);
    }
    numsparearearead++;
    NumSpareAreaToRead--;
    /* Calculate page address */
   addressstatus = FSMC_NAND_AddressIncrement(&Address);
  }
  status = FSMC_NAND_GetStatus();
  return (status | addressstatus);
}
/**
  * @brief   This routine erase complete block from NAND FLASH
  * @param  Address: Any address into block to be erased
  * @retval New status of the NAND operation. This parameter can be:
  *              - NAND_TIMEOUT_ERROR: when the previous operation generate
  *                a Timeout error
  *              - NAND_READY: when memory is ready for the next operation
  */
uint32_t FSMC_NAND_EraseLargeBlock(NAND_ADDRESS Address)//大页需要更改
{
  *(__IO uint8_t *)(Bank_NAND_ADDR | CMD_AREA) = NAND_CMD_ERASE0;
  *(__IO uint8_t *)(Bank_NAND_ADDR | ADDR_AREA) = ADDR_3rd_CYCLE(ROW_ADDRESS);
  *(__IO uint8_t *)(Bank_NAND_ADDR | ADDR_AREA) = ADDR_4th_CYCLE(ROW_ADDRESS);
  *(__IO uint8_t *)(Bank_NAND_ADDR | CMD_AREA) = NAND_CMD_ERASE1;
  return (FSMC_NAND_GetStatus());
}
/**
  * @brief   This routine reset the NAND FLASH
  * @param  None
  * @retval NAND_READY
  */
uint32_t FSMC_NAND_Reset(void)
{
  *(__IO uint8_t *)(Bank_NAND_ADDR | CMD_AREA) = NAND_CMD_RESET;
  return (NAND_READY);
}
/**
  * @brief  Get the NAND operation status
  * @param  None
  * @retval New status of the NAND operation. This parameter can be:
  *              - NAND_TIMEOUT_ERROR: when the previous operation generate
  *                a Timeout error
  *              - NAND_READY: when memory is ready for the next operation  */
uint32_t FSMC_NAND_GetStatus(void)
{
  uint32_t timeout = 0x1000000, status = NAND_READY;
  status = FSMC_NAND_ReadStatus();
  /* Wait for a NAND operation to complete or a TIMEOUT to occur */
  while ((status != NAND_READY) &&( timeout != 0x00))
  {
     status = FSMC_NAND_ReadStatus();
     timeout --;
  }
  if(timeout == 0x00)
  {
    status =  NAND_TIMEOUT_ERROR;
  }
/* Return the operation status */
  return (status);
}
/**
  * @brief  Reads the NAND memory status using the Read status command
  * @param  None
  * @retval The status of the NAND memory. This parameter can be:
  *              - NAND_BUSY: when memory is busy
  *              - NAND_READY: when memory is ready for the next operation
  *              - NAND_ERROR: when the previous operation gererates error*/
uint32_t FSMC_NAND_ReadStatus(void)
{
  uint32_t data = 0x00, status = NAND_BUSY;
  /* Read status operation ------------------------------------ */
  *(__IO uint8_t *)(Bank_NAND_ADDR | CMD_AREA) = NAND_CMD_STATUS;
  data = *(__IO uint8_t *)(Bank_NAND_ADDR);
  if((data & NAND_ERROR) == NAND_ERROR)
  {
    status = NAND_ERROR;
  }
  else if((data & NAND_READY) == NAND_READY)
  {
    status = NAND_READY;
  }
  else
  {
    status = NAND_BUSY;
  }
  
  return (status);
}

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damiaa|  楼主 | 2009-8-13 15:22 | 只看该作者
/**
  * @brief  Increment the NAND memory address
  * @param  Address: address to be incremented.
  * @retval The new status of the increment address operation. It can be:
  *              - NAND_VALID_ADDRESS: When the new address is valid address
  *              - NAND_INVALID_ADDRESS: When the new address is invalid address   
  */
uint32_t FSMC_NAND_AddressIncrement(NAND_ADDRESS* Address)
{
  uint32_t status = NAND_VALID_ADDRESS;
  Address->Page++;
  if(Address->Page == NAND_BLOCK_SIZE)
  {
    Address->Page = 0;
    Address->Block++;
    if(Address->Block == NAND_ZONE_SIZE)
    {
      Address->Block = 0;
      Address->Zone++;
      if(Address->Zone == NAND_MAX_ZONE)
      {
        status = NAND_INVALID_ADDRESS;
      }
    }
  }
    return (status);
}
//MAIN.C

/* Includes ------------------------------------------------------------------*/
#include "fsmc_largenand.h"
#include "stm32_eval.h"

/** @addtogroup STM32F10x_StdPeriph_Examples
  * @{
  */

/** @addtogroup FSMC_NAND
  * @{
  */

/* Private typedef -----------------------------------------------------------*/
/* Private define ------------------------------------------------------------*/
#define BUFFER_SIZE         0x2000
#define NAND_ST_MakerID     0xEC//0x20
#define NAND_ST_DeviceID    0xF1//0x76

/* Private macro -------------------------------------------------------------*/
/* Private variables ---------------------------------------------------------*/
NAND_IDTypeDef NAND_ID;
GPIO_InitTypeDef GPIO_InitStructure;
NAND_ADDRESS WriteReadAddr;
uint8_t TxBuffer[BUFFER_SIZE], RxBuffer[BUFFER_SIZE];
__IO uint32_t PageNumber = 2, WriteReadStatus = 0, status= 0;
uint32_t j = 0;

/* Private function prototypes -----------------------------------------------*/
void RCC_Configuration(void);
void Fill_Buffer(uint8_t *pBuffer, uint16_t BufferLenght, uint32_t Offset);

/* Private functions ---------------------------------------------------------*/

/**
  * @brief   Main program.
  * @param  None
  * @retval None
  */
int main(void)
{
  /* System Clocks Configuration */
  RCC_Configuration();

  /* Initialize Leds mounted on STM3210X-EVAL board */
  STM_EVAL_LEDInit(LED1);
  STM_EVAL_LEDInit(LED2);
  STM_EVAL_LEDInit(LED3);
  
  /* Enable the FSMC Clock */
  RCC_AHBPeriphClockCmd(RCC_AHBPeriph_FSMC, ENABLE);
  
  /* FSMC Initialization */
  FSMC_NAND_Init();

  /* NAND read ID command */
  FSMC_NAND_ReadID(&NAND_ID);

  /* Verify the NAND ID */
  if((NAND_ID.Maker_ID == NAND_ST_MakerID) && (NAND_ID.Device_ID == NAND_ST_DeviceID))
  {

    /* NAND memory address to write to */
    WriteReadAddr.Zone = 0x00;
    WriteReadAddr.Block = 0x01;
    WriteReadAddr.Page = 0x02;

    /* Erase the NAND first Block */
    status = FSMC_NAND_EraseLargeBlock(WriteReadAddr);

    WriteReadAddr.Page = 0x04;
    /* Read back the written data */
    status = FSMC_NAND_ReadLargePage (RxBuffer, WriteReadAddr, 1);
    WriteReadAddr.Page = 0x06;
    status = FSMC_NAND_ReadLargePage (RxBuffer, WriteReadAddr, 1/*PageNumber*/);
    //这里读出来的都是FF,正确
    /* Write data to FSMC NAND memory */
    /* Fill the buffer to send */
    Fill_Buffer(TxBuffer, BUFFER_SIZE , 0x55);
    WriteReadAddr.Page = 0x04;
    status = FSMC_NAND_WriteLargePage(TxBuffer, WriteReadAddr, 1/*PageNumber*/);
   
    WriteReadAddr.Page = 0x04;
    /* Read back the written data */
    status = FSMC_NAND_ReadLargePage (RxBuffer, WriteReadAddr, 1);
   
    /* Verify the written data */
    for(j = 0; j < 2048; j++)
    {
      if(TxBuffer[j] != RxBuffer[j])
      {
        WriteReadStatus++;
      }
    }/* Read back the written data */
    //比较都正确
    WriteReadAddr.Page = 0x06;
    status = FSMC_NAND_WriteLargePage(TxBuffer, WriteReadAddr, 1/*PageNumber*/);

    WriteReadAddr.Page = 0x06;
    status = FSMC_NAND_ReadLargePage (RxBuffer, WriteReadAddr, 1/*PageNumber*/);
   
    /* Verify the written data */
    for(j = 0; j < 2048; j++)
    {
      if(TxBuffer[j] != RxBuffer[j])
      {
        WriteReadStatus++;
      }
    }

   //比较到1600个后就不正确啦. 有时多有时少.问题就在这里.....!!!!!!!!

    if (WriteReadStatus == 0)
    {
      /* OK */
      /* Turn on LED1 */
      STM_EVAL_LEDOff(LED1);
    }
    else
    {
      /* KO */
      /* Turn on LED2 */
      STM_EVAL_LEDOff(LED2);
    }
  }
  else
  {
    /* Turn on LED3 */
    STM_EVAL_LEDOff(LED3);
  }

  while(1)
  {
  }
}

/**
  * @brief  Configures the different system clocks.
  * @param  None
  * @retval None
  */
void RCC_Configuration(void)
{
  /* Setup the microcontroller system. Initialize the Embedded Flash Inte**ce,
     initialize the PLL and update the SystemFrequency variable. */
  SystemInit();
}

/**
  *   Function name : Fill_Buffer
  * @brief  Fill the buffer
  * @param  pBuffer: pointer on the Buffer to fill
  * @param  BufferSize: size of the buffer to fill
  * @param  Offset: first value to fill on the Buffer
  */
void Fill_Buffer(uint8_t *pBuffer, uint16_t BufferLenght, uint32_t Offset)
{
  uint16_t IndexTmp = 0;

  /* Put in global buffer same values */
  for (IndexTmp = 0; IndexTmp < BufferLenght; IndexTmp++ )
  {
    pBuffer[IndexTmp] = IndexTmp + Offset;
  }
}

#ifdef  USE_FULL_ASSERT

/**
  * @brief  Reports the name of the source file and the source line number
  *   where the assert_param error has occurred.
  * @param  file: pointer to the source file name
  * @param  line: assert_param error line source number
  * @retval None
  */
void assert_failed(uint8_t* file, uint32_t line)
{
  /* User can add his own implementation to report the file name and line number,
     ex: printf("Wrong parameters value: file %s on line %d\r\n", file, line) */

  /* Infinite loop */
  while (1)
  {
  }
}
#endif

帮我找找问题吧.

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5
damiaa|  楼主 | 2009-8-13 17:23 | 只看该作者
搞定啦.地址问题.

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6
香水城| | 2009-8-13 17:38 | 只看该作者
嘿嘿,幸亏没有花时间看你的程序~~~~~~

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7
damiaa|  楼主 | 2009-8-14 13:30 | 只看该作者
偷懒还偷对啦啊.哈哈.

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8
bios51| | 2009-8-15 22:00 | 只看该作者
搞定啦.地址问题
哪里?

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