请问，STM32F103内部flash存储数据受限的问题

只看该作者 · 2016-3-30 10:53

最近在调试STM32F103内部flash，测试发现，当我写100组16位数据放在flash里，然后读取正常，放200组读取不正常。这个大概是有什么原因造成的？代码如下
write_adr：写入的地址为偶数，我用255页的首地址：0x807f800
buf:  待写入的数据
len:  写入的数据长度
FLASH_WRITE_STA FLASH_WRITE_more_halfword(uint32_t write_adr, uint16_t* buf, uint16_t len)
{
   volatile uint8_t i = 0;
   FLASH_Status sta;

   if (write_adr < 0x0807f800 || write_adr > 0x0807ffff)    //限制在255页
   return WRITE_FAIL;

   if (len > ((2*1024) / 2))  //最大写入1K
   len = 1024;

   FLASH_Unlock();          //解锁，方可擦除
   FLASH_ClearFlag(FLASH_FLAG_BSY | FLASH_FLAG_EOP | FLASH_FLAG_PGERR | FLASH_FLAG_WRPRTERR);//清标志位

   sta = FLASH_ErasePage(0x0807f800); //擦除255页
   if (FLASH_COMPLETE != sta)
{
   FLASH_Lock();
   return WRITE_FAIL;
      }

for (i=0; i<len; i++)             //写入数据
{
sta = FLASH_ProgramHalfWord(write_adr, buf[i]);
   if (FLASH_COMPLETE != sta)
{
FLASH_Lock();
         return WRITE_FAIL;
            }

write_adr += 2;             //16位数据，地址加2
}

FLASH_Lock();                   //上锁
return WRITE_OK;

}

void FLASH_READ_more_halfword(uint32_t read_adr, uint16_t* buf, uint16_t len)
{
volatile uint8_t i = 0;

         for (i=0; i<len; i++)
{
   buf[i] = *((__IO uint16_t*)read_adr); //读数据
   read_adr += 2;
}

}