紫腾IC培训现在推出半导体工艺培训课程 www.zitengic.com
主要课程是 针对现在的主流的先进的CMOS工艺的各个模块及工艺整合进行培训
应学员的要求,现把有关wafer process的培训方案和教学大纲公布如下:
1.
Device technology – after studying this section, you will be able to
a)
Identify difference between analog and digital devices and passive and active components. Explain the effects of parasitic structures in passive components
§
Show the resistor and capacitors structure and the cross section in IC
b)
Describe the PN junction, why it is important, and explain reverse and forward biasing
§
Show how PN junction was made in fab and how it works and is important
c)
State the characteristics of bipolar technology and the bipolar junction transistor in terms of function, biasing, structure and applications
d)
Explain the basic characteristics of CMOS technology, including the filed effect transistor, biasing and the CMOS inverter
§
Why CMOS called surface device and it is main stream technology, what the benefit is from Bipolar.
e)
Explain the effects of parasitic transistors and the implications for CMOS latch up
§
Show CMOS cross section and layout map to understand what parasitic effects are and what is Latch up, and how to optimize
f)
Give examples of IC products and state some application of each
2.
Photolithography – after studying this section, you will be able to
a)
Explain the basic concepts for photolithography, including process overview, critical dimension generations, light spectrum, resolution and process latitude
b)
State and describe the eight basic steps to photolithography
§
Show the whole photo process with pictures to explain why photolithography is the heart of wafer process
§
Explain what technology notes (like 130 nm, 90 nm, 45nm ) mean
c)
Describe the chemistry and benefits of conventional i-line photoresist and DUV resist, including chemically amplified resists
§
Showing what Chemically Amplified Resists is, and the related theory
d)
Explain the purpose of alignment and exposure in photolithography
§
This is key part for photo technology, showing the way of work of photo machine and related theory. Then introduce what scanner and stepper are
e)
Explain the resolution, describe its critical parameters, and discuss how it is calculated
f)
Describe reticles, explain how they are manufactured and discuss their use in microlithography
§
Introduce what OPC and PSM are, the related theory and benefit
g)
Explain how alignment is achieved in lithography
§
Show photo machine alignment system and explain how alignment is achieved
h)
Explain why and how a post exposure bake is done for conventional and Chemically Amplified DUV resist
3.
Etch – after studying this section, you will be able to
a)
List and discuss eight important etch parameters
§
Like what is etch rate, etch profile, etch bias, selectivity etc
b)
Explain dry etch, including its advantage and how etching action takes place
§
Introduce what is plasma etching, chemical and physical dry etch mechanisms
c)
List and describe the equipment systems for seven dry plasma etch reactors
§
Like barrel plasma etcher, planar reactor and downstream etch systems etc
d)
Give an application example for dielectric, silicon and metal dry etch
e)
Discuss etch inspection and important quality measures
4.
Metallization –after studying this section, you will be able to
a)
List and describe the six categories of metals used in wafer fabrication. Discuss the performance requirements and give applications for each metal category
§
Like Aluminum, Aluminum ~ Copper alloys, Copper, Barrier metals, Silicides and Metal plugs
b)
Explain the benefits for using copper metallization in wafer fabrication. Describe the challenges for implementing copper
c)
State the physics of sputtering. Discuss different sputtering tools and applications
§
Show the theory and way of works for sputtering
d)
Describe the benefits and applications for metal CVD
e)
Describe a process flow for dual Damascene processing
§
Showing the benefit is with dual Damascene by compared with Al process
5.
WAT (wafer acceptable test) – after studying this section, you will be able to
a)
Explain process test and device test methodology and targets
§
Combined with transistor theory and CMOS process technology
§
Will introduce what is short channel effect, short width effect and etc
b)
Describe how process factor influence WAT parameters (like Idsat, Vth, Isub etc)
c)
Know the general guild line on WAT fail and how to have correlation study with Esort test for yield improvement
§
Introduce how to have correlation analysis and data group comparison
6.
Metrology – after studying this section, you will be able to
a)
Explain why IC metrology is performed, and discuss the different categories of wafer measurement equipment and data collection methods for analysis
§
To maintain wafer process consistent, keep good yield and throughput performance. We need know what IC metrology is, and how we collect data and have analysis for abnormal behaviors
b)
State twelve different quality measures and identify the fabrication processes where each is use
§
Like film thickness, sheer resistance, capacitance – voltage and etc.
c)
Discuss the various metrology methods and equipment associated with different quality measures
d)
List and discuss the purpose of seven different types of analytical equipment used to support IC fabrication
§
Introduce what FIB, EDX, TEM and etc are, and how to use them.
7.
Process integration – Using 90 nm process to summarize what you learned |
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