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[技术求助]

BQ34Z100的问题

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qa85274195|  楼主 | 2015-12-17 10:15 | 只看该作者 回帖奖励 |倒序浏览 |阅读模式
沙发
豆腐块| | 2015-12-17 22:11 | 只看该作者
BQ34Z100用户指南里应该有说明,可能是需要自己公式推导

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板凳
airwill| | 2015-12-18 09:19 | 只看该作者
那些都是软件方面的问题了, 看手册的说法
Cell information is stored in the bq34z100-G1 in non-volatile flash memory. Many of these data flash locations are accessible during application development and pack manufacture. They cannot, generally, be accessed directly during end-equipment operation. Access to these locations is achieved by using the bq34z100-G1’s companion evaluation software, through individual commands, or through a sequence of data-flash-access commands. To access a desired data flash location, the correct data flash subclass and offset must be known.
The bq34z100-G1 provides 32 bytes of user-programmable data flash memory.

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地板
豆腐块| | 2015-12-27 21:44 | 只看该作者
楼主关于BQ34Z100的电量监测是怎么设计的

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