2、需要根据自己的芯片型号更改Flash页面大小，比如GD32F103C8T6的页面大小为1K，GD32F103VCT6的页面大小为2K
#define PAGE_SIZE ((uint32_t)(1024))
#define NAND_FLASH_BASE_ADDRESS ((uint32_t)(0x08000000 + 0x04000))
#define NAND_FLASH_END_ADDRESS ((uint32_t)(0x08000000 + 0x10000))
修改了页面大小，同时还需要修改写扇区函数
比如页面大小为1K，那么写函数修改为：
/*!
\brief write data to multiple blocks of flash
\param[in] pBuf: pointer to user buffer
\param[in] write_addr: address to be write
\param[in] block_size: block size
\param[in] block_num: number of block
\param[out] none
\retval status
*/
uint32_t flash_write_multi_blocks (uint8_t *pBuf,
uint32_t write_addr,
uint16_t block_size,
uint32_t block_num)
{
uint32_t i, page;
uint32_t start_page = (write_addr / PAGE_SIZE) * PAGE_SIZE + NAND_FLASH_BASE_ADDRESS;
uint32_t *ptrs = (uint32_t *)pBuf;
page = block_num;
for(; page > 0; page--){
fmc_page_erase(start_page);
i = 0;
do{
fmc_word_program(start_page, *ptrs++);
start_page += 4;
}while(++i < 256);
}
return 0;
}
|
楼主
