FLASH 读写问题，同一地址，写入后读出来数据不一样

只看该作者 · 2024-12-26 08:58

同一地址，写入后读出来数据不一样
/******************************************************************************
* 函数名称：Memory_Check
* 功能：**检测，防止重复写数据
* 返回值：
*******************************************************************************/
uint16_t Memory_Check(void)
{
uint16_t temp;
temp=FLASH_ReadWord(0x0020);
if(temp==0x52)return 0;
else
{
      FLASH_WriteWord(dataAddr,Buf,Staus_Cont&0x00ff);//第一次写入档位
      FLASH_WriteWord(0x0020,Buf,0x52&0x00ff);

}
return 1;

}

主函数中初始化先进行**检查
while(Memory_Check)//**检查，防止每次上电写数据
{

      if(EUSART2_is_tx_ready())
      {
         EUSART2_Write(FLASH_ReadWord(0x0020));
      }

}
while (1)

只看该作者 · 2024-12-26 09:03

只看该作者 · 2024-12-26 10:08

uint16_t FLASH_ReadWord(uint16_t flashAddr)
{
uint8_t GIEBitValue = INTCONbits.GIE; // Save interrupt enable

INTCONbits.GIE = 0;    // Disable interrupts
NVMADRL = (flashAddr & 0x00FF);
NVMADRH = ((flashAddr & 0xFF00) >> 8);

NVMCON1bits.NVMREGS = 0; // Deselect Configuration space
NVMCON1bits.RD = 1;    // Initiate Read
NOP();
NOP();
INTCONbits.GIE = GIEBitValue; // Restore interrupt enable

return ((uint16_t)((NVMDATH << 8) | NVMDATL));
}

void FLASH_WriteWord(uint16_t flashAddr, uint16_t *ramBuf, uint16_t word)
{
uint16_t blockStartAddr = (uint16_t)(flashAddr & ((END_FLASH-1) ^ (ERASE_FLASH_BLOCKSIZE-1)));
uint8_t offset = (uint8_t)(flashAddr & (ERASE_FLASH_BLOCKSIZE-1));
uint8_t i;

// Entire row will be erased, read and save the existing data
for (i=0; i<ERASE_FLASH_BLOCKSIZE; i++)
{
      ramBuf[i] = FLASH_ReadWord((blockStartAddr+i));
}

// Write at offset
ramBuf[offset] = word;

// Writes ramBuf to current block
FLASH_WriteBlock(blockStartAddr, ramBuf);
}

只看该作者 · 2024-12-26 13:54

FLASH 写之前要擦除

只看该作者 · 2024-12-26 14:07

20062516 发表于 2024-12-26 13:54
FLASH 写之前要擦除

有做擦除的，在这个void FLASH_WriteWord函数中已经做了block擦除
int8_t FLASH_WriteBlock(uint16_t writeAddr, uint16_t *flashWordArray)
{
uint16_t blockStartAddr  = (uint16_t )(writeAddr & ((END_FLASH-1) ^ (ERASE_FLASH_BLOCKSIZE-1)));
uint8_t    GIEBitValue = INTCONbits.GIE; // Save interrupt enable
uint8_t i;

// Flash write must start at the beginning of a row
if( writeAddr != blockStartAddr )
{
      return -1;
}

INTCONbits.GIE = 0;       // Disable interrupts

// Block erase sequence
FLASH_EraseBlock(writeAddr);//擦除block

// Block write sequence
NVMCON1bits.NVMREGS = 0; // Deselect Configuration space
NVMCON1bits.WREN = 1; // Enable wrties
NVMCON1bits.LWLO = 1; // Only load write latches

for (i=0; i<WRITE_FLASH_BLOCKSIZE; i++)
{
      // Load lower 8 bits of write address
      NVMADRL = (writeAddr & 0xFF);
      // Load upper 6 bits of write address
      NVMADRH = ((writeAddr & 0xFF00) >> 8);

// Load data in current address
      NVMDATL = flashWordArray;
      NVMDATH = ((flashWordArray & 0xFF00) >> 8);

      if(i == (WRITE_FLASH_BLOCKSIZE-1))
      {
         // Start Flash program memory write
         NVMCON1bits.LWLO = 0;
      }

      NVMCON2 = 0x55;
      NVMCON2 = 0xAA;
      NVMCON1bits.WR = 1;
      NOP();
      NOP();

      writeAddr++;
}

NVMCON1bits.WREN = 0;    // Disable writes
INTCONbits.GIE = GIEBitValue; // Restore interrupt enable

return 0;
}

FLASH 读写问题，同一地址，写入后读出来数据不一样

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