Rita, 很感谢你指点，不明白的点是：
1. 在400Mhz情况下， DDR Stress Tester 三轮校准后生成的参数
结果如下：
MMDC_MPWLDECTRL0 ch0 after write level cal: 0x00130014
MMDC_MPWLDECTRL1 ch0 after write level cal: 0x001B0015
Read DQS Gating calibration
MPDGCTRL0 PHY0 (0x021b083c) = 0x024C025C
MPDGCTRL1 PHY0 (0x021b0840) = 0x0240023C
Read calibration
MPRDDLCTL PHY0 (0x021b0848) = 0x42383E40
Write calibration
MPWRDLCTL PHY0 (0x021b0850) = 0x3C3A3E3C
2. 使用上面的校准值填入 inc 文件中，使用该inc 文件进行压力测试，结果如下
Beginning stress test
loop: 1
DDR Freq: 528 MHz
t0.1: data is addr test
t0: memcpy11 SSN test
t1: memcpy8 SSN test
t2: byte-wise SSN test
t3: memcpy11 random pattern test
t4: IRAM_to_DDRv2 test
t5: IRAM_to_DDRv1 test
t6: read noise walking ones and zeros test
loop: 2
DDR Freq: 528 MHz
t0.1: data is addr test
t0: memcpy11 SSN test
t1: memcpy8 SSN test
t2: byte-wise SSN test
t3: memcpy11 random pattern test
t4: IRAM_to_DDRv2 test
t5: IRAM_to_DDRv1 test
t6: read noise walking ones and zeros test
从结果来看，528MHz 下压力测试通过,这就是硬件可以在528Mhz正常工作的，我就无法理解的点，求解？
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