| Rita, 很感谢你指点,不明白的点是: 1. 在400Mhz情况下, DDR Stress Tester 三轮校准后生成的参数
 结果如下:
 MMDC_MPWLDECTRL0 ch0 after write level cal: 0x00130014
 MMDC_MPWLDECTRL1 ch0 after write level cal: 0x001B0015
 
 Read DQS Gating calibration
 MPDGCTRL0 PHY0 (0x021b083c) = 0x024C025C
 MPDGCTRL1 PHY0 (0x021b0840) = 0x0240023C
 
 Read calibration
 MPRDDLCTL PHY0 (0x021b0848) = 0x42383E40
 
 Write calibration
 MPWRDLCTL PHY0 (0x021b0850) = 0x3C3A3E3C
 
 2. 使用上面的校准值填入 inc 文件中,使用该inc 文件进行压力测试,结果如下
 Beginning stress test
 
 loop: 1
 DDR Freq: 528 MHz
 t0.1: data is addr test
 t0: memcpy11 SSN test
 t1: memcpy8 SSN test
 t2: byte-wise SSN test
 t3: memcpy11 random pattern test
 t4: IRAM_to_DDRv2 test
 t5: IRAM_to_DDRv1 test
 t6: read noise walking ones and zeros test
 
 loop: 2
 DDR Freq: 528 MHz
 t0.1: data is addr test
 t0: memcpy11 SSN test
 t1: memcpy8 SSN test
 t2: byte-wise SSN test
 t3: memcpy11 random pattern test
 t4: IRAM_to_DDRv2 test
 t5: IRAM_to_DDRv1 test
 t6: read noise walking ones and zeros test
 
 从结果来看,528MHz 下压力测试通过,这就是硬件可以在528Mhz正常工作的,我就无法理解的点,求解?
 
  
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